Publisher’s Note: “Sheath width effect on the determination of plasma frequency in the cutoff probe” [Appl. Phys. Lett. 100, 244107 (2012)]

Kim, D. W.; You, S. J.; Kim, J. H.; Chang, Hong‐Young; Oh, Wang‐Yuhl

doi:10.1063/1.4740220

Cited by 4 publications

(5 citation statements)

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“…Liu et al found out that nitrogenated a-IGZO TFT has superior reliability compared to a-IGZO TFT due to the reduced oxygen absorption/desorption reaction to the atmosphere [10]. Kim et al reported an enhancement of S.S, which was attributed to the decrease of density of interface trap states between the channel and dielectric layer due to the N insertion in InSnO TFTs [11].…”

Section: Introductionmentioning

confidence: 99%

Suppression of temperature instability in InGaZnO thin-film transistors by in situ nitrogen doping

Raja

Jang

Balaji

et al. 2013

Semicond. Sci. Technol.

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We have investigated the effect of nitrogen doping on the behavior of hysteresis curve and its suppression of temperature instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs). The in situ nitrogen doping reduced the temperature induced abnormal sub threshold leakage current and traps generation. Large falling-rate (F R ) ∼ 0.26 eV V −1 , low activation energy (E a ) ∼ 0.617 eV and a small hysteresis compared to the pure a-IGZO TFTs, shows the best immunity to thermal instability. This is mainly attributed to the reduction of interface trap density and oxygen vacancies due to the passivation of defects and/dangling bonds.

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Section: Introductionmentioning

confidence: 99%

Suppression of temperature instability in InGaZnO thin-film transistors by in situ nitrogen doping

Raja

Jang

Balaji

et al. 2013

Semicond. Sci. Technol.

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“…The peak at 530.4 eV indicates that a-IGZO had no oxygen deficiencies, whereas the peak at 531.5 eV is attributed to oxygen-deficient regions. [19][20][21] The relative area of the oxygen vacancy-related peak decreased from 48% (air annealing) to 12% (O 2 HPA) and even to 9% (O 2 + H 2 O HPA). This implies that H 2 O vapor-assisted O 2 HPA is more effective at reducing oxygen deficiencies than only O 2 HPA.…”

mentioning

confidence: 98%

Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing

Ahn

Kim

Yun

et al. 2014

ECS J. Solid State Sci. Technol.

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The effect of high-pressure annealing on the performance and negative bias temperature illumination stress (NBTIS)-induced instability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated. IGZO TFTs that were annealed in a H 2 O vapor-assisted high-pressure O 2 atmosphere exhibited significantly improved field-effect mobility and stability against NBTIS compared with those annealed in only high-pressure O 2 or air. Annealing under high-pressure O 2 in the presence of H 2 O vapor effectively reduces oxygen-related defects, which act as subgap states within the bandgap. This phenomenon affects band alignments, including the bandgap and conduction band offset [ (E C -E F )] of IGZO semiconductors, and is the basis for the improved performance and stability of the TFTs.Amorphous oxide semiconductor (AOS)-based thin-film transistors (TFTs) are promising structures that can be incorporated in a variety of electronic applications, including large-area display panels such as active matrix liquid crystal displays (AMLCDs) and organic light-emitting diodes (AMOLEDs). 1,2 Their major advantages include high field-effect mobility, excellent uniformity, low processing temperature, and transparency in visible light. 3 Considerable research has been carried out to simultaneously improve the performance and stability of AOS-based TFTs. Although their electrical performance is acceptable, their poor stability under bias thermal illumination stress still remains a crucial problem that inhibits commercialization. 1,2 Many studies have been carried out on AOS-based TFTs to better understand the deterioration of the device stability under negative bias temperature illumination stress (NBTIS). 4-10 Although the origin of the degradation remains unclear, it is generally believed that the presence of donor-like oxygen vacancies (V O ) located within the wide AOS bandgap leads to poor device stability by shifting the threshold voltage. 11,12 Two mechanisms have been proposed concerning the relationship between V O and NBTIS instability, i.e., the trapping of photo-generated hole carriers 5,6 and the creation of ionized oxygen vacancy defects. 7-9 Several groups have annealed AOS-based TFTs to suppress such oxygen-related defects. Those approaches have included atmospheric-pressure annealing in H 2 O or O 2 , or H 2 O + O 2 , and high-pressure annealing (HPA) in O 2 . 7,10,13-15 Nomura et al. 10 reported that annealing in wet O 2 effectively decreased electron trapping, but there was no direct evidence for enhancement of NBTIS stability. Ji et al. 15 suggested that O 2 HPA of IGZO TFTs could strongly suppress the generation of photo-generated hole carriers. However, there is still a lack of direct electronic structure data to explain the variation in TFT performance, such as TFT mobility and NBTIS instability. There have been few reported attempts to improve simultaneously the performance and NBTIS stability of AOS-TFTs that can be implemented in backplane devices. In this work, the effect of ambient HPA on the perfo...

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“…202303778 For efficient photodetection, various semiconducting materials such as colloidal quantum dots (CQDs), perovskite, organic, 2D materials, and their hybrid structures have been proposed. [5][6][7][8] In particular, the 0D-2D phototransistor, a combination of a CQD and transition-metal dichalcogenides (TMDCs), was investigated owing to its significant advantages. [9,10] In this combination, the CQD enables broadband light absorption with high absorptivity, and TMDCs serve as an efficient charge transport channel.…”

Section: Introductionmentioning

confidence: 99%

Sulfurized Colloidal Quantum Dot/Tungsten Disulfide Multi‐Dimensional Heterojunction for an Efficient Self‐Powered Visible‐to‐SWIR Photodetector

Kim

Lee

Moon

et al. 2023

Adv Funct Materials

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Emerging semiconducting materials show considerable promise for application in the development of next‐generation optoelectronic devices. In particular, broadband light detection is crucial in various applications, including multispectral imaging and cognition. Therefore, tuning the physical properties of semiconductors and thereby building an efficient heterojunction are important for achieving a high‐performance photodetection device. In this study, a heavy p‐type colloidal quantum dot (CQD) is synthesized through solution‐based sulfurization. The resulting cubic‐shaped CQD exhibits broadband and strong absorption, which enable its broadband absorption. Further, a multidimensional 0D‐2D heterojunction is developed using p‐type CQD and n‐type tungsten disulfide (WS2). This efficient p‐n junction is operated as a fully self‐powered optical sensor and phototransistor under various light illumination conditions. Under the self‐powered condition, the CQD/WS2 heterojunction device exhibits 440‐ and 200‐fold‐higher responsivity and detectivity, respectively, than pristine WS2.

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Publisher’s Note: “Sheath width effect on the determination of plasma frequency in the cutoff probe” [Appl. Phys. Lett. 100, 244107 (2012)]

Cited by 4 publications

References 0 publications

Suppression of temperature instability in InGaZnO thin-film transistors by in situ nitrogen doping

Suppression of temperature instability in InGaZnO thin-film transistors by in situ nitrogen doping

Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing

Sulfurized Colloidal Quantum Dot/Tungsten Disulfide Multi‐Dimensional Heterojunction for an Efficient Self‐Powered Visible‐to‐SWIR Photodetector

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