Publisher's Note: Structural, electronic, mechanical, and transport properties of phosphorene nanoribbons: Negative differential resistance behavior [Phys. Rev. B 
<b>94</b>
, 075422 (2016)]

Maity, Ajanta; Singh, Akansha; Sen, Prasenjit; Kibey, Aniruddha; Kshirsagar, Anjali; Kanhere, D. G.

doi:10.1103/physrevb.97.239902

Cited by 13 publications

(24 citation statements)

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“…The I − V curve characteristic of pure zPNR devices has been reported previously [13][14][15], however, all features of transport have not been studied. For the sake of completeness, we comprehensively calculate the voltage drop, transmission pathways, atomic current, and effect of the N and Si doping on zPNR systems in the out-of-equilibrium conditions.…”

Section: Transport In Zpnrs: Finite Bias Resultsmentioning

confidence: 99%

Charge transport in doped zigzag phosphorene nanoribbons

Nourbakhsh

Asgari

2018

Phys. Rev. B

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The effects of lattice distortion and chemical disorder on charge transport properties of twoterminal zigzag phosphorene nanoribbons (zPNRs), which shows resonant tunneling behavior under an electrical applied bias, are studied. Our comprehensive study is based on ab initio quantum transport calculations on the basis of the Landauer theory. We use nitrogen and silicon substitutional dopant atoms, and employ different physical quantities such as the I − V curve, voltage drop behavior, transmission spectrum, transmission pathway, and atomic current to explore the transport mechanism of zPNR devices under a bias voltage. The calculated transmission pathways show the transition from a ballistic transport regime to a diffusive and in some particular cases to localized transport regimes. Current flowing via the chemical bonds and hopping are monitored, however, the conductance originates mainly from the charge traveling through the chemical bonds in the vicinity of the zigzag edges. Our results show that, in the doped systems, the device conductance decreases and the negative differential resistance characteristic becomes weak or is eliminated. Besides, the conductance in a pure zPNR system is almost independent of the ribbon width.PACS numbers:

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Section: Transport In Zpnrs: Finite Bias Resultsmentioning

confidence: 99%

Charge transport in doped zigzag phosphorene nanoribbons

Nourbakhsh

Asgari

2018

Phys. Rev. B

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“…For the zPNR system, there is almost no carrier hopping between the electrodes and the scattering region when the bias range is limited below 1.4 V. The current increases with the applied bias voltage and reaches a maximum value of 1.36 nA at V bias ¼ 1.55 V. However, with a further increase in V bias , the current decreases dramatically, and consequently a negative differential resistance (NDR) phenomenon arises 8,46 where the current decreases with an increment of voltage in some bias windows.…”

Section: Resultsmentioning

confidence: 96%

“…In addition to phosphorene sheets, phosphorene nanoribbons (PNRs) have also been studied theoretically. 8,19,21 Both armchair and zigzag PNRs show interesting optoelectrical and mechanical properties and have recently been under intense investigation by different scientic groups.…”

Section: Introductionmentioning

confidence: 99%

Charge transport in germanium doped phosphorene nanoribbons

Azizi

Ghavami

2018

RSC Adv.

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New two dimensional structures containing phosphorus and germanium atoms are introduced for nanoelectronic applications. Under various bias voltages, electronic transport in the systems has been studied with the non-equilibrium Green's function formalism. I-V characteristics have been extracted.The density of states (DOS) and transmission spectra, T(E,V bias ), have been investigated and it was shown that charge transport occurs when the bias voltage reaches about 1 V. The negative differential resistance (NDR) appears in zigzag phosphorene nanoribbons (zPNRs) while it is completely suppressed after replacing edge phosphorus atoms with germanium ones. The calculated molecular projected selfconsistent Hamiltonian (MPSH) shows that the spatial distribution of orbital levels has been affected by the electrodes. The studied structures have a band-gap of about 0.7 eV which absorbs light in the visible range and thus these structures could be interesting contenders for solar cells applications.

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“…Using Eqs. (12) and (13), the reflected and transmitted wave states are derivable in the final form of…”

Section: Entanglement Generation In a One-dimensional Tight-bindimentioning

confidence: 99%

Two-impurity entanglement generation by electron scattering in zigzag phosphorene nanoribbons

Amini

Soltani

Ghanbari-Adivi

et al. 2019

Quantum Inf Process

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In this paper, we investigate how two on-side doped impurities with net magnetic moments in an edge chain of a zigzag phosphorene nanoribbon (zPNR) can be entangled by scattering of the traveling edge-state electrons. To this end, in the first step, we employ the Lippmann-Scwinger equation as well as the Green's function approach to study the scattering of the free traveling electrons from two magnetic impurities in a one-dimensional tight-binding chain. Then, following the same formalism, that is shown that the behavior of two on-side spin impurities in the edge chain of a zPNR in responding to the scattering of the edge-state traveling electrons is very similar to what happens for the one-dimensional chain. In both cases, considering a known incoming wave state, the reflected and transmitted parts of the final wave state are evaluated analytically. Using the obtained results, the related partial density matrices and the reflection and transmission probabilities are computable. Negativity as a measure of the produced entanglement in the final state is calculated and the results are discussed. Our theoretical model actually proposes a method, which is perhaps experimentally performable to create the entanglement in the state of the impurities .

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Publisher's Note: Structural, electronic, mechanical, and transport properties of phosphorene nanoribbons: Negative differential resistance behavior [Phys. Rev. B 94 , 075422 (2016)]

Cited by 13 publications

References 0 publications

Charge transport in doped zigzag phosphorene nanoribbons

Charge transport in doped zigzag phosphorene nanoribbons

Charge transport in germanium doped phosphorene nanoribbons

Two-impurity entanglement generation by electron scattering in zigzag phosphorene nanoribbons

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