Pulse Amplification Using Impact Ionization in Germanium

Steele, M. C.; Pensak, L.; Gold, Robert D.

doi:10.1109/jrproc.1959.287138

Cited by 9 publications

(1 citation statement)

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“…3 (c)). The largest electric field was limited by the high densities of 31 P and 75 As donors in our samples, which can undergo avalanche impact ionization at higher fields given the large separations between the parallel plates [32]. Much larger electric fields will be permitted in nano-scale gated devices or in lightly doped macroscopic crystals.…”

Section: Resultsmentioning

confidence: 95%

Large Stark tuning of donor electron spin qubits in germanium

et al. 2016

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Donor electron spins in semiconductors make exceptional quantum bits because of their long coherence times and compatibility with industrial fabrication techniques. Despite many advances in donor-based qubit technology, it remains difficult to selectively manipulate single donor electron spins. Here, we show that by replacing the prevailing semiconductor host material (silicon) with germanium, donor electron spin qubits can be electrically tuned by more than an ensemble linewidth, making them compatible with gate addressable quantum computing architectures. Using X-band pulsed electron spin resonance, we measured the Stark effect for donor electron spins in germanium. We resolved both spin-orbit and hyperfine Stark shifts and found that at 0.4 T, the spin-orbit Stark shift dominates. The spin-orbit Stark shift is highly anisotropic, depending on the electric field orientation relative to the crystal axes and external magnetic field. When the Stark shift is maximized, the spin-orbit Stark parameter is four orders of magnitude larger than in silicon. At select orientations a hyperfine Stark effect was also resolved and is an order of magnitude larger than in silicon. We report the Stark parameters for 75 As and 31 P donor electrons and compare them to the available theory. Our data reveal that 31 P donors in germanium can be tuned by at least four times the ensemble linewidth making germanium an appealing new host material for spin qubits that offers major advantages over silicon.

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Section: Resultsmentioning

confidence: 95%