Pulse-modulated infrared-laser interferometric thermometry for non-contact silicon substrate temperature measurement

Abstract

Articles you may be interested inComparison of laser-based and monochromator-based thermodynamic temperature measurements AIP Conf. Proc. 1552, 60 (2013); 10.1063/1.4819516 Short wavelength far infrared laser polarimeter with silicon photoelastic modulatorsa) Rev. Sci. Instrum. 79, 10E720 (2008); 10.1063/1.2957936 Noncontact nanosecond-time-resolution temperature measurement in excimer laser heating of Ni-P disk substrates Appl.Diffuse reflectance spectroscopy measurement of substrate temperature and temperature transient during molecular beam epitaxy and implications for low-temperature III-V epitaxy

Low-Coherence Interferometry-Based Non-Contact Temperature Monitoring of a Silicon Wafer and Chamber Parts during Plasma Etching

“…Temperature measurement by optical interferometry with an infrared laser was also reported. [11][12][13][14][15][16] The number of sinusoidal interference fringes between the top and bottom surfaces of a Si wafer was counted and integrated to estimate the optical path length, and the temperature variation was deduced by the changes in this optical path length. However, this technique accumulates the error originated from vibration and a slight fluctuation of temperature.…”

Development of a real-time temperature measurement technique for SiC wafer during ultra-rapid thermal annealing based on optical-interference contactless thermometry (OICT)

“…Another non-contact technique determines temperature changes according to the thermal expansion and thermooptic coefficient (TOC) 15) of wafers. [16][17][18][19][20] TOC describes the temperature dependence of the refractive index of the wafer. When a wafer is irradiated by a laser beam, changes in the optical path between the front and back surfaces of the wafer due to refractive index changes and thermal expansion during thermal processing result in optical interference in both reflected and transmitted light.…”

Robust characteristics of semiconductor-substrate temperature measurement by autocorrelation-type frequency-domain low-coherence interferometry

“…13) Other noncontact methods using an optical interferometer with an infrared laser were proposed. [14][15][16][17] These noncontact optical techniques determine temperature changes from the thermal expansion and refractive index changes of a transparent substrate of known thickness. However, there remain difficulties such as their poor tolerance to mechanical disturbances, resulting in limited resolution and temperature ranges when monitoring silicon wafers.…”