Pulse Radiolysis Study on a Highly Sensitive Chlorinated Resist ZEP520A

Hosaka, Yuji; Oyama, Tomoko Gowa; Oshima, Akira; Enomoto, Satoshi; Washio, Masakazu; Tagawa, Seiichi

doi:10.2494/photopolymer.26.745

Cited by 14 publications

(13 citation statements)

References 18 publications

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“…Water was purified using PF-Housing MODEL-III (for patterned electrode preparation) or AUTOPURE WD500 (for arylation reaction) equipment. Positive EB resist (ZEP520A) was purchased from ZEON Corporation. , Espacer 300Z, a conductive polymer used to coat the resist, was purchased from Showa Denko . 2-Propanol, pentyl acetate, and N , N -dimethylacetamide were purchased from Wako Pure Chemical Industries and used as received.…”

Section: Methodsmentioning

confidence: 99%

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Effective Method for Micro-Patterning Arene-Terminated Monolayers on a Si(111) Electrode

et al. 2016

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Microstructured electrodes are significant to modern electrochemistry. A representative aromatic group, 4-ferrocenylphenyl one, was covalently bound to a micropatterned silicon electrode via the arylation of a hydrogen-terminated silicon(111) surface formed selectively on a Si wafer. Starting from a silicon(100)-on-insulator (SOI) wafer, the aromatic monolayer was attached sequentially by spin-coating a resist, electron beam lithography, Cr/Au deposition, lift-off, anisotropic etching with aqueous KOH solution, and Pd-catalyzed arylation. Cyclic voltammetry (CV) and X-ray photoelectron spectroscopy (XPS) are used to characterize the coupling reaction between 4-ferrocenyl group and silicon substrate, and to confirm performance of the final modified microsized electrode. These data show that this synthetic protocol gives chemically well-defined and robust functionalized monolayers on a silicon semiconducting surface with a small electrode.

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Section: Methodsmentioning

confidence: 99%

“…Positive EB resist (ZEP520A) was purchased from ZEON Corporation. 10,11 Espacer 300Z, a conductive polymer used to coat the resist, was purchased from Showa Denko. 12 2-Propanol, pentyl acetate, and N,N-dimethylacetamide were purchased from Wako Pure Chemical Industries and used as received.…”

Section: Introductionmentioning

confidence: 99%

Effective Method for Micro-Patterning Arene-Terminated Monolayers on a Si(111) Electrode

et al. 2016

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“…The increase of roughness at the positive tone region of ZEP resist may have connected to the decomposition of ZEP resists. The decomposition mechanism of ZEP resists under EB irradiations has been reported [11,15]. The dissociation of chlorine from the main chain was confirmed and ZEP resists underwent β-scission to form terminal double bonds (C=CH 2 ) at both alpha-chloro-methacrylate group and alpha-methyl-styrene group [11].…”

Section: 5mentioning

confidence: 95%

Electron-Beam Induced Shrinkage Effects on Line-Space Patterns of ZEP Resist

Dinh

Oshima

Nishijima

et al. 2016

J. Photopol. Sci. Technol.

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ZEP resist patterns, which have been widely used in nanofabrication in research laboratories, are shrunk during an SEM observation. This shrinkage effect makes it challenging to accurately determine their original sizes. In this work, the shrinkage effect of electron beams on ZEP resist line-space patterns was explored by AFM measurement at different exposure doses. The results shown that the shrinkage happened at doses as low as 0.05 mC/cm 2 , and dramatically increased before being saturated at high doses of 16 -24 mC/cm 2 (at 30 keV). For patterns with the same height, a smaller pattern tended to undergo a bigger shrinkage. The heights of patterns also had a great impact on their shrinkages. In the saturation region at high does, the patterns were unchanged in isopropyl alcohol developer. The insolubility of the patterns suggested that the resist had changed to a negative tone, where the number of crosslinking sites of the resist was high, and caused the saturation of shrinkage. A new method for estimating of the original size was also introduced using a combination of SEM, EB exposure, and AFM.

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“…In the case of ZEP520A, the reaction induced by EB / EUV exposure is mainly chain scission due to dissociative electron attachment 23,24 . For UV-III, the reaction is polarity change 25 .…”

Section: Free-volume In Resistsmentioning

confidence: 99%

Evaluation of vacancies in positive-tone non-chemically and chemically amplified EUV / EB resists: relationship between free-volume and LER

et al. 2014

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EUV, X-ray and EB mainly induce ionization in resist materials and its energy deposition process is different from ArF exposure. Linear energy transfer (LET) effect for resist sensitivity is very important issue from the viewpoint of radiation induced chemical reactions for high-volume nanofabrication. Therefore the knowledgebase of radiation chemistry is required for understanding the resist performances for EUV lithography. In order to acquire the knowledge of resist materials for EUV / EB lithography from a viewpoint of the free-volume, the positron annihilation lifetime spectroscopy was carried out using positron probe microanalyzer (PPMA) installed at AIST. The size of free-volume can be evaluated from the lifetime of ortho-Positronium (o-Ps). The lifetime and intensity of o-Ps in EB-exposed positive-tone non-chemically amplified (non-CA, ZEP) and CA (UV-III) EUV / EB resists were observed. Moreover, to evaluate the relationship between line edge roughness (LER) and free-volume, EB lithography was carried out, and then sensitivities (E0 and Esize) and LER were measured. For both non-CA and CA resist materials, the changes of free-volume due to evaporation of outgas, polarity change or chain scission would hardly influence on their LER and resolution.

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Pulse Radiolysis Study on a Highly Sensitive Chlorinated Resist ZEP520A

Cited by 14 publications

References 18 publications

Effective Method for Micro-Patterning Arene-Terminated Monolayers on a Si(111) Electrode

Effective Method for Micro-Patterning Arene-Terminated Monolayers on a Si(111) Electrode

Electron-Beam Induced Shrinkage Effects on Line-Space Patterns of ZEP Resist

Evaluation of vacancies in positive-tone non-chemically and chemically amplified EUV / EB resists: relationship between free-volume and LER

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