2005
DOI: 10.1016/j.jmmm.2004.11.566
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Pulse reverse plating for integrated magnetics on Si

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Cited by 38 publications
(17 citation statements)
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“…11 The films were electrodeposited at a constant current density of 3 mA/ cm 2 . Pt/Ti pieces were used as anode and silicon wafer pieces ͑ϳ2 cm 2 area͒ with a sputtered Ti͑20 nm͒/Cu͑50 nm͒ seed layer were used as the cathode ͑subsequently referred to as Si/Ti/Cu substrates͒.…”
Section: Methodsmentioning
confidence: 99%
“…11 The films were electrodeposited at a constant current density of 3 mA/ cm 2 . Pt/Ti pieces were used as anode and silicon wafer pieces ͑ϳ2 cm 2 area͒ with a sputtered Ti͑20 nm͒/Cu͑50 nm͒ seed layer were used as the cathode ͑subsequently referred to as Si/Ti/Cu substrates͒.…”
Section: Methodsmentioning
confidence: 99%
“…20 Electrodes were cut out from commercial brass and coated with a polymer, which left a plating area of 5 ϫ 5 mm 2 . The microstructure, composition, thickness, magnetic properties, and crystalline structure were determined using scanning electron microscopy, energy-dispersive x-ray spectroscopy ͑EDX͒, a surface profilometer, a 5 T superconducting quantum interference device magnetometer, and x-ray diffraction with Cu K␣ radiation, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…1(d)] was prepared by an electrodeposition process 15 on patterned substrates fabricated by nanoimprint lithography. 5 A polymethylmethacrylate (PMMA, molecular weight ∼230 k) layer of 1 μm thick was spin-coated on a cleaned, 0.5-mm-thick silicon substrate and baked at 100 • C for 10 min in air.…”
Section: Methodsmentioning
confidence: 99%