Pulsed electrodeposition of CuSCN for superfilling of ZnO nanowire array electrodes

Gertman, Ronen; Berger, Yaron; Visoly‐Fisher, Iris

doi:10.1016/j.electacta.2014.01.090

Cited by 7 publications

(12 citation statements)

References 33 publications

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“…Despite the simplicity and low-cost of this solution-based fabrication process, the resulting devices were found to exhibit excellent electrical contact and rectification. However, a more complicated pulsed deposition process was shown to significantly improve the device performance [55]. Other electronic devices that incorporate CuSCN into heterostructures include spray-deposited pn junction diodes [58], flexible hybrid diodes embedded into polymer matrices [59], solar cells with ZnO-nanorod arrays [60], and ZnO-nanorod based light-emitting diodes (LEDs) shown in figure 4 [61].…”

Section: Applications Of Cuscnmentioning

confidence: 99%

Copper(I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronics

Wijeyasinghe

Anthopoulos

2015

Semicond. Sci. Technol.

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Recent advances in large-area optoelectronics research have demonstrated the tremendous potential of copper(I) thiocyanate (CuSCN) as a universal hole-transport interlayer material for numerous applications, including, transparent thin-film transistors, high-efficiency organic and hybrid organicinorganic photovoltaic cells, and organic light-emitting diodes (OLEDs). CuSCN combines intrinsic hole-transport (p-type) characteristics with a large bandgap (>3.5 eV) which facilitates optical transparency across the visible to near infrared part of the electromagnetic spectrum. Furthermore, CuSCN is readily available from commercial sources while it is inexpensive and can be processed at low-temperatures using solution-based techniques. This unique combination of desirable characteristics makes CuSCN a promising material for application in emerging large-area optoelectronics. In this review article, we outline some important properties of CuSCN and examine its use in the fabrication of potentially low-cost optoelectronic devices. The merits of using CuSCN in numerous emerging applications as an alternative to conventional hole-transport materials are also discussed.

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Section: Applications Of Cuscnmentioning

confidence: 99%

Copper(I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronics

Wijeyasinghe

Anthopoulos

2015

Semicond. Sci. Technol.

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“…Excess [SCN] is known to induce p-type doping of CuSCN, and CuSCN conductivity was previously found to depend on the stoichiometric excess of SCN because SCN accepts electrons generating holes in the valence band. , Though a quantitative relation between the [S]/[Cu] ratio and the hole concentration was not yet established, to the best of our knowledge, the conductivity of CuSCN was found to increase from 0.06 S/m for [S]/[Cu] = 1 to 1 S/m for [S]/[Cu] = 2. Increased [SCN] excess was achieved by exposure of the solid CuSCN film to halogen gas, to a solution of (SCN) 2 in CCl 4 , or to thiocyanogen gas. , We have previously shown that using PED increased the [S]/[Cu] ratio compared to potentiostatic deposition . EDS measurements showed that the [S]/[Cu] ratio in CuSCN NWs grown by PED was ca.…”

Section: Resultsmentioning

confidence: 99%

“…The t off interval discharges the charged layer in the electrolyte near the cathode surface, caused by the cation reduction, and regenerates the ion concentration there, resulting in denser nucleation and a more uniform growth. We have previously shown that PED can improve CuSCN electrodeposition; 32 hence, it was used herein for the deposition of CuSCN NW arrays.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…For photocathodes; nano-structured photocathodes can be of greater interest due to their large surface area. 32 . Nanostructuring the photo-electrode is one way to overcome this limit, by enlarging the area of the absorber film without increasing the device dimensions 4 or the film thickness.…”

Section: Introductionmentioning

confidence: 99%

“…We have previously shown that PED can improve CuSCN electrodeposition,32 hence it was used herein for the deposition of CuSCN NW arrays. We have previously shown that PED can improve CuSCN electrodeposition,32 hence it was used herein for the deposition of CuSCN NW arrays.…”

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confidence: 99%

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Nanostructured Photocathodes for Infrared Photodetectors and Photovoltaics

2015

Self Cite

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Interfacial energy band alignment is crucial for applications involving charge transfer and transport. Specifically, efficient photovoltaic (PV) devices require fine tuning of the energy levels at interfaces between the absorber and the electrodes for extraction of photogenerated charges. Infrared (IR) absorbers have a small bandgap, hence such tuning is difficult using common electrode materials. Semiconductor sensitized PV devices typically utilize transparent metal oxide photoanodes, since many semiconductor absorbers can inject photoexcited electrons into their conduction bands. Transparent photocathode electrodes, to which photoexcited holes are transferred from semiconductor absorbers, are less common.Transparent nanostructured photocathodes with beneficial energy level alignment with small bandgap semiconductors can widen the material choices for IR photoelectrodes. Herein we show that CuSCN nanowire (NW) arrays can serve as such photocathodes, with efficient transfer of photogenerated holes from bulk-like PbS absorbing in the IR and near-IR range.Pulsed electrodeposition was used to fabricate high-quality CuSCN NW arrays. Significant NIR and IR photocurrents showed that the CuSCN NW array is an efficient photocathode for PbS sensitized IR photovoltaic devices. Comparison of various electrode materials verified the photogenerated hole injection vs. competing processes such as electron injection and recombination, and suggested that this material system can be used for studying photosensitized hole injection from other small bandgap semiconductors.

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UV photoresponse properties of ZnO nanorods arrays deposited with CuSCN by SILAR method

Shi

et al. 2015

Chemical Physics Letters

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Pulsed electrodeposition of CuSCN for superfilling of ZnO nanowire array electrodes

Cited by 7 publications

References 33 publications

Copper(I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronics

Copper(I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronics

Nanostructured Photocathodes for Infrared Photodetectors and Photovoltaics

UV photoresponse properties of ZnO nanorods arrays deposited with CuSCN by SILAR method

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