Pulsed-laser-deposited ultraviolet-emitting SrS:Te thin films

Abstract

High quality ZnO thin films grown by plasma enhanced chemical vapor deposition J. Appl. Phys. 91, 501 (2002); 10.1063/1.1415545Near band-edge transition in aluminum nitride thin films grown by metal organic chemical vapor deposition

Temperature Dependent Cathodoluminescence Characterization of Ultraviolet Emitting Films Grown by Pulsed Laser Deposition

“…The optimum voltage for each type of thin film was consistent with previous Monte Carlo simulations of the electron beam interaction depth in SrS. 12 At low beam energies the increase in beam energy increases the effective interaction volume and concomitantly increases the CL signal. A majority of the CL signal originates near the tail of the electron beam interaction volume, at high beam energies, the electron beam interaction volume extends into the silicon substrate and decreases the CL intensity.…”

“…Initial investigations into the SrS:Te system have been conducted to establish the efficacy surrounding the use of pulsed laser deposition to grow thin films (0.1-1.5µm) of SrS with controlled stoichiometry. 12 In this paper, multi-layer and single-layer thin films have been characterized by low temperature (LT) CL. Figure 3 shows the SEM micrographs of as-grown and annealed samples.…”

“…A base pressure of 3x10 -6 Torr was used for all experiments, while depositions were carried out in Ar at a pressure of 200 mTorr. From our earlier work these conditions produce the most accurate stoichiometry, 1:1 ratio of Sr to S. 12 Films were grown on (100) single crystal p-type Si substrates, which were cut into 2 cm x 2cm pieces. A high purity pressed and sintered powder SrS sputtering target 5 cm in diameter x 6 mm thick was used to deposit the bulk thin films while a Te sputtering target 7.5 cm in diameter x 6 mm thick was used to deposit thin layers of Te.…”

Blue shift in band gap and photoluminescence of pulsed laser deposited SrS:Ce/quartz thin film nanophosphors

“…due to their high luminescence yields [1][2][3][4][5]. SrS, a member of AES family, acts as a good insulator due to indirect band gap of 4.2 eV in the bulk form.…”

P-225L: Late-News Poster: A Systematic Study of SrS:Ce ACTFEL Devices for Full-Color Display Application

“…SrS:Ce ACTFEL display devices have not been studied systematically and experimentally although some particular characteristics were investigated and some theoretical models were proposed and discussed [2]. When these devices are applied in a practical full-color display system, a systematical understanding on electrical and optical characteristics is a must and a prerequisite as well as the relationship between performance and the underlying characterization [3,4,5]. Considering the commercial potentials of SrS:Ce ACTFEL display devices we have been investigating, the device structure (shown in Fig.…”