2014
DOI: 10.1117/1.jnp.8.084091
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Pulsed laser deposition of Al-doped ZnO films on glass and polycarbonate

Abstract: Abstract. Al-doped ZnO (AZO) films were deposited on glass and polycarbonate (PC) at room temperature by using pulsed Nd:YAG laser at 355 nm. AZO thin films were obtained for both substrates at laser fluences from 2 to 5 J∕cm 2 in O 2 partial pressure of 2.1 Pa. The effects of laser fluence on the structural, electrical, and optical properties of the films were investigated. The films with lowest resistivity and highest transmittance have been obtained at 2 J∕cm 2 . The resistivities were 2.29 × 10 −3 Ω cm for… Show more

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Cited by 19 publications
(6 citation statements)
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“…This fluence was lower than the typical fluence for the growth of ZnO based films, thus the growth rate was extremely low and the incorporation of Al species is uncertain [10]. Lower fluence was shown to be ineffective in producing plasma plume for AZO deposition, that results in low growth rate [13]. Moderation of ions velocity is thus better achieved by using higher background pressure.…”
Section: Resultsmentioning
confidence: 93%
See 1 more Smart Citation
“…This fluence was lower than the typical fluence for the growth of ZnO based films, thus the growth rate was extremely low and the incorporation of Al species is uncertain [10]. Lower fluence was shown to be ineffective in producing plasma plume for AZO deposition, that results in low growth rate [13]. Moderation of ions velocity is thus better achieved by using higher background pressure.…”
Section: Resultsmentioning
confidence: 93%
“…In order to obtain sufficient growth rate and high quality films, typical fluence of 2-3 Jcm −2 for KrF [4][5][6][7][8] and 355 nm [8][9][10][11] lasers are used. At higher laser fluences, unwanted droplets are deposited [10,12] and the morphology, optical, electrical properties of the films deteriorate [13]. ZnO is typically grown in the presence of O 2 to ensure stoichiometric films.…”
Section: Introductionmentioning
confidence: 99%
“…Aluminum doping enhances the conductivity of ZnO, making AZO suitable for applications in optoelectronic devices as a transparent conductive component and ENZ material. 7 , 8 AZO is cheap and easy to fabricate with various techniques, such as dc magnetron sputtering, 9 atomic layer deposition, 10 pulsed-laser deposition, 11 , 12 and so on. The optical properties of AZO can be tailored, to some extent, acting on the deposition parameters, like the doping level, 13 , 14 thickness, 15 , 16 or substrate temperature.…”
Section: Introductionmentioning
confidence: 99%
“…Aluminum doping enhances the conductivity of ZnO, making AZO suitable for applications in optoelectronic devices, as a transparent conductive component and ENZ material. 7,8 AZO is cheap and easy to fabricate with various techniques, such as dc magnetron sputtering, 9 atomic layer deposition, 10 pulsed-laser deposition 11,12 etc. The optical properties of AZO can be tailored, to some extent, acting on the deposition parameters, like doping level, 13,14 thickness 15,16 or the substrate temperature.…”
Section: Introductionmentioning
confidence: 99%