Abstract. Al-doped ZnO (AZO) films were deposited on glass and polycarbonate (PC) at room temperature by using pulsed Nd:YAG laser at 355 nm. AZO thin films were obtained for both substrates at laser fluences from 2 to 5 J∕cm 2 in O 2 partial pressure of 2.1 Pa. The effects of laser fluence on the structural, electrical, and optical properties of the films were investigated. The films with lowest resistivity and highest transmittance have been obtained at 2 J∕cm 2 . The resistivities were 2.29 × 10 −3 Ω cm for AZO on glass and 1.49 × 10 −3 Ω cm for AZO on PC. With increasing laser fluence, the deposited films have lower crystallinity, higher resistivity, and smaller optical bandgap.

Al-doped and undoped ZnO films as transparent conducting oxide coating were deposited by using pulsed Nd:YAG laser. The films were grown at room temperature to 300 C in O 2 background pressure. The low growth temperature is required to enable devices on polymer substrate. The properties of the samples were measured by using atomic force microscopy, UV-visible spectroscopy, 4 point probe method and Hall Effect measurement. Nanostructure films were produced and transmittance of the films in the visible region was more than 80%. The resistivity of undoped ZnO sample was more sensitive to substrate temperature than the background pressure. The resistivity of the sample deposited at 300C was about 6 orders of magnitude lower than that obtained at room temperature. However, the growth of Al doped ZnO sample was more sensitive to background pressure than substrate temperature that low resistivity can be obtained at substrate temperature in wide range of 100 to 200C.