Pulsed laser deposition of doped skutterudite thin films

Colceag, D.; Dauscher, A.; Lenoir, Bertrand; Ros, V. Da; Bı̂rjega, R.; Moldovan, A.; Dinescu, M.

doi:10.1016/j.apsusc.2007.02.149

Cited by 13 publications

(12 citation statements)

References 14 publications

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“…The best films with respect to the skutterudite phase formation, were deposited at lower temperatures and exhibit a slight excess of Sb, which is in agreement to other published work [18,25,26].…”

Section: Codeposition Of Co and Sb At Elevated Substrate Temperaturessupporting

confidence: 91%

“…By an excess of Sb in the targets, this range can be shifted to higher temperatures. Colceag et al [25] were not successful to prepare single-phase skutterudite films by PLD, but in their work a lower substrate temperature around 200°C leads to the skutterudite phase as major phase. Suzuki [26] did not find a systematic dependency of the phase formation on the laser fluence, substrate temperature or Sb content in films prepared by PLD.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Structural properties of thermoelectric CoSb3 skutterudite thin films prepared by molecular beam deposition

Daniel

Brombacher

Beddies

et al. 2015

Journal of Alloys and Compounds

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Section: Codeposition Of Co and Sb At Elevated Substrate Temperaturessupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Structural properties of thermoelectric CoSb3 skutterudite thin films prepared by molecular beam deposition

Daniel

Brombacher

Beddies

et al. 2015

Journal of Alloys and Compounds

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“…The use of silver paste is reported to reduce isotropic compressive stresses that cause blistering of the surface of CoSb 3 films. 28 The large target-substrate distance, the presence of argon gas, and the use of silver paint ensured that all the grown films were free of blistering.…”

Section: A Growth Of Filmsmentioning

confidence: 99%

“…Moreover, the available reports on the growth, [21][22][23] transport, and structural properties [24][25][26][27] are either limited to CoSb 3 films or on thermoelectric properties of filled CoSb 3 films. 27 For instance, Caylor et al 22 and Colceag et al 28 have studied the influence of growth conditions on the phase purity, crystallinity, and morphology of CoSb 3 thin films grown by pulsed laser deposition (PLD). Savchuk et al 24 have studied the carrier transport mechanisms in CoSb 3 thin films grown by dc magnetron sputtering.…”

mentioning

confidence: 99%

Lattice dynamics and substrate-dependent transport properties of (In, Yb)-doped CoSb3 skutterudite thin films

Kumar

Kyu

Alshareef

2011

Journal of Applied Physics

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Lattice dynamics, low-temperature electrical transport, and high-temperature thermoelectric properties of (In, Yb)-doped CoSb3 thin films on different substrates are reported. Pulsed laser deposition under optimized conditions yielded single-phase polycrystalline skutterudite films. Raman spectroscopy studies suggested that In and Yb dopants occupy the cage sites in the skutterudite lattice. Low-temperature electrical transport studies revealed the n-type semiconducting nature of the films with extrinsic and intrinsic conduction mechanisms, in sharp contrast to the degenerate nature reported for identical bulk samples. Calculations yielded a direct bandgap close to 50 meV with no evidence of an indirect gap. The carrier concentration of the films was identical to that reported for the bulk and increased with temperature beyond 250 K. The higher resistivity exhibited is attributed to the enhanced grain boundary scattering in films with a high concentration of grains. The maximum power factor of ∼0.68 W m−1 K−1 obtained at 660 K for the film on glass is found to be nearly four times smaller compared to that reported for the bulk. The observed difference in the power factors of the films on different substrates is explained on the basis of the diffusion of oxygen from the substrates and the formation of highly conducting CoSb2 phase upon the oxidation of CoSb3.

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“…Especially, skutterudites like CoSb 3 are promising alloys for thermoelectric applications, following Slack's concept of “phonon glass electron crystal” (PGEC) 6. Skutterudites have a high power factor, S 2 / ρ , and the specific structural properties allow a decrease of the thermal conductivity without influencing S and ρ 7–13.…”

Section: Introductionmentioning

confidence: 99%

Influence of the substrate thermal expansion coefficient on the morphology and elastic stress of CoSb₃ thin films

Daniel

Friedemann

Jöhrmann

et al. 2012

Physica Status Solidi (a)

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During the post-annealing and cooling process of CoSb 3 thin films deposited on thermally oxidized Si(100) substrates, cracks occur at the surface of the films, which can be caused by the difference in thermal expansion coefficient of the substrate and the film. To investigate the crack formation, 40-nm-thick CoSb 3 films were deposited at room temperature under ultrahigh vacuum (UHV) conditions onto various substrates, exhibiting different thermal expansion coefficients (2 Â 10 À6 to 12 Â 10 À6 K À1 ). All samples were post-annealed in UHV at 500 8C for 1 h. The composition of the films was verified by Rutherford backscattering spectrometry. The phase formation and elastic stress of the films were analyzed by X-ray diffraction, confirming the formation of the desired skutterudite phase, while the individual grains were studied by electron backscatter diffraction. In addition, the surface morphology and the roughness of the films were investigated by atomic force microscopy. For substrates with a thermal expansion coefficient between 9 Â 10 À6 and 11 Â 10 À6 K À1 , crack formation can be prevented and a minimum in roughness was found, resulting also in a minimal value of the electrical resistivity.

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Pulsed laser deposition of doped skutterudite thin films

Cited by 13 publications

References 14 publications

Structural properties of thermoelectric CoSb3 skutterudite thin films prepared by molecular beam deposition

Structural properties of thermoelectric CoSb3 skutterudite thin films prepared by molecular beam deposition

Lattice dynamics and substrate-dependent transport properties of (In, Yb)-doped CoSb3 skutterudite thin films

Influence of the substrate thermal expansion coefficient on the morphology and elastic stress of CoSb₃ thin films

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Pulsed laser deposition of doped skutterudite thin films

Cited by 13 publications

References 14 publications

Structural properties of thermoelectric CoSb3 skutterudite thin films prepared by molecular beam deposition

Structural properties of thermoelectric CoSb3 skutterudite thin films prepared by molecular beam deposition

Lattice dynamics and substrate-dependent transport properties of (In, Yb)-doped CoSb3 skutterudite thin films

Influence of the substrate thermal expansion coefficient on the morphology and elastic stress of CoSb3 thin films

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Influence of the substrate thermal expansion coefficient on the morphology and elastic stress of CoSb₃ thin films