Pulsed laser deposition of epitaxial BaFe12O19 thin films

Carosella, C.A.; Chrisey, Douglas B.; Lubitz, P.; Horwitz, J. S.; Dorsey, Paul; Seed, R.; Vittoria, C.

doi:10.1063/1.350614

Cited by 107 publications

(34 citation statements)

References 13 publications

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“…As a result, new technologies and techniques for the miniaturization of components have been developed, for example, thin-and thickfilm techniques. These techniques, e.g., pulsed-laser deposition, sputtering, and spin coating [1][2][3][4][5], require individual, complex setups for each new product. Most of them are based on creating a vacuum and require high-purity, highly homogeneous substrates with a low roughness.…”

Section: Introductionmentioning

confidence: 99%

Barium hexaferrite suspensions for electrophoretic deposition

Ovtar

Lisjak

Drofenik

2009

Journal of Colloid and Interface Science

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Section: Introductionmentioning

confidence: 99%

Barium hexaferrite suspensions for electrophoretic deposition

Ovtar

Lisjak

Drofenik

2009

Journal of Colloid and Interface Science

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] M -type ferrites have a large uniaxial magnetocrystalline anisotropy and generally the hexagonal c axis is the easy axis of magnetization. Hence, there has been interest in depositing these films having c-axis orientation.…”

Section: Introductionmentioning

confidence: 99%

“…M -type barium ferrite ͑BaM͒ films with c-axis oriented normal to the film plane have been reported by different workers. [1][2][3][4][5][6][7][8][9] These films have been deposited using different deposition techniques such as dc and rf diode sputtering, targets facing type sputtering, laser ablation, etc. 4 -7 These films have been crystallized either by in situ heating of substrates or postdeposition annealing of the films.…”

Section: Introductionmentioning

confidence: 99%

The effect of deposition and annealing conditions on textured growth of sputter-deposited strontium ferrite films on different substrates

Acharya

Prasad

Venkataramani

et al. 1996

Journal of Applied Physics

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M -type strontium ferrite films were prepared by radio-frequency ͑rf͒ sputtering on fused quartz substrates using different deposition conditions and were subjected to two different types of annealing treatments. The study showed that in addition to the deposition conditions such as rf power, oxygen to argon ratio in the sputtering gas, and target to substrate distance, the postdeposition annealing conditions also play an important role in determining the texture and properties of the films. The films with random orientation or with preferred c-axis orientation either normal to the film plane or in the film plane could be deposited depending on the process parameters chosen. The study carried out by depositing these films on different substrates such as Si͑100͒, Si͑111͒, sapphire͑110͒, and Gd 3 Ga 5 O 12 ͑111͒ showed that though the nature of the substrates plays a role in determining the texture and properties of the films, such effects are less dominant in comparison to the effect of deposition and annealing conditions in the case of strontium ferrite films.

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“…Since then there have been many groups that have grown BaM via PLD. [8][9][10] Song et al 9 have reported half power linewidths of BaM grown on sapphire as low as 27 Oe at 60.3 GHz. Over time it has been shown that the best quality films correspond to high-temperature growth ͑Ͼ900°C͒ on lattice-matched substrates ͑sapphire, Al 2 O 3 , MgO, GdGa-garnet ͑GGG͒, etc.͒.…”

Section: Pulsed Laser Depositionmentioning

confidence: 99%

Ba‐Hexaferrite Films for Next Generation Microwave Devices

Harris

Chen

et al. 2006

ChemInform

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Next generation magnetic microwave devices require ferrite films to be thick ͑Ͼ300 m͒, self-biased ͑high remanent magnetization͒, and low loss in the microwave and millimeter wave bands. Here we examine recent advances in the processing of thick Ba-hexaferrite ͑M-type͒ films using pulsed laser deposition ͑PLD͒, liquid-phase epitaxy, and screen printing. These techniques are compared and contrasted as to their suitability for microwave materials processing and industrial production. Recent advances include the PLD growth of BaM on wide-band-gap semiconductor substrates and the development of thick, self-biased, low-loss BaM films by screen printing. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2165145͔ INTRODUCTIONDriven by radar electronics and wireless technologies, the next generation of magnetic microwave devices ͑isola-tors, filters, phase shifters, and circulators and related components͒ will be planar, self-biased, and low loss, and operate well beyond the performance metrics of today's devices. Self-biasing is an important property that eliminates the need for a biasing field that is provided by a comparatively large permanent magnet. The elimination of this magnet is an essential step in making these devices smaller and planar. Integration with semiconductor devices continues to be a desirable property that requires ferrite fabrication techniques to be compatible with complementary metal-oxide semiconductor ͑CMOS͒ processing. This is a difficult task considering that most ferrite fabrication techniques require temperatures Ͼ900°C to produce high-quality films.In order to achieve these goals, magnetic materials must possess high saturation magnetization ͑4M s ͒, high remanent magnetization ͑M r ͒, adjustable magnetic anisotropy fields ͑H A ͒, low microwave losses ͓i.e., low ferromagnetic resonance ͑FMR͒ linewidths ⌬H FMR ͔, and for many applications, have the easy axis of magnetization perpendicular to the film plane ͑i.e., perpendicular magnetic anisotropy͒. In physical terms, the films should be thick ͑Ͼ300 m͒, dense ͑low levels of porosity that are responsible for added microwave loss͒, and pure phase. For many applications the microstructure should possess a strong crystallographic orientation, although true epitaxy is not required.In this paper, we focus on recent advances made in the processing of Ba hexaferrite films for applications in microwave and millimeter-wave devices, with special emphasis on circulator devices. We will compare and contrast different film processing technologies including pulsed laser deposition ͑PLD͒, liquid-phase epitaxy ͑LPE͒, and screen printing.Ba ͑M-type͒ hexaferrite ͑henceforth BaM͒ has the magnetoplumbite structure and a stoichiometry of BaFe 12 O 19 . This structure has 32 atoms/ f.u. and 64 atoms in a single unit cell ͑see Fig. 1͒. One property of this compound that is of particular value in microwave device design is the strong uniaxial anisotropy with the easy direction being along the c axis ͑H A ϳ 17 000 Oe͒.1,2 The high magnetic anisotropy field can b...

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Pulsed laser deposition of epitaxial BaFe12O19 thin films

Cited by 107 publications

References 13 publications

Barium hexaferrite suspensions for electrophoretic deposition

Barium hexaferrite suspensions for electrophoretic deposition

The effect of deposition and annealing conditions on textured growth of sputter-deposited strontium ferrite films on different substrates

Ba‐Hexaferrite Films for Next Generation Microwave Devices

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