Pulsed laser deposition of ZnO thin films in silicon and sapphire

ZnO thin films and light-emitting diodes

“…However, the MBE technique can grow ZnO thin films of good optical and structural qualities with a carrier concentration of ∼10 17 cm −3 and a mobility of ∼150 cm 2 V −1 s −1 [13]. There have been several reports on high-quality ZnO thin films grown by pulsed laser deposition (PLD) and chemical vapour deposition (CVD), but more progress is required compared with those of molecular beam epitaxy (MBE) [14,15]. As far as CVD is concerned, the high pre-reaction rate of Zn and O precursors obstructs the improvement of quality of ZnO thin films.…”