Pulsed magnetron sputter technology

Schiller, S.; Goedicke, K.; Reschke, J.; Kirchhoff, V. W. J. H.; Schneider, Susanne; Milde, F.

doi:10.1016/0257-8972(93)90248-m

Cited by 318 publications

(117 citation statements)

References 8 publications

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“…Some limitations are however obvious such as low target utilization, low ionization of the sputtered material and risk of arc generation in reactive sputter deposition of dielectric materials. Some of these problems have been alleviated by pulsing the applied voltage [19,20], others by additional ionization by rf [21] or microwave [22] power or by increased magnetic confinement [23].…”

Section: Introductionmentioning

confidence: 99%

“…Asymmetric bipolar pulsing in the medium frequency range (10-250 kHz), has become established as one of the main techniques for deposition of oxide and nitride films [19,24]. Unipolar pulsing, which is applied in the experiment described here, utilizes short high power pulses but operates at fairly normal average power levels due to a low duty factor of less than 1%.…”

Section: Introductionmentioning

confidence: 99%

“…Two principal methods of pulsing have been proposed: asymmetric bipolar pulsing [19] and unipolar pulsing [20]. Asymmetric bipolar pulsing in the medium frequency range (10-250 kHz), has become established as one of the main techniques for deposition of oxide and nitride films [19,24].…”

Section: Introductionmentioning

confidence: 99%

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Ion-acoustic solitary waves in a high power pulsed magnetron sputtering discharge

Gylfason¹,

Alami²,

Helmersson³

et al. 2005

J. Phys. D: Appl. Phys.

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We report on the creation and propagation of ion-acoustic solitary waves in a high power pulsed magnetron sputtering discharge. A dense localized plasma is created by applying high energy pulses (4-12 J) of length ≈70 µs, at a repetition frequency of 50 pulses per second, to a planar magnetron sputtering source. The temporal behaviour of the electron density, measured by a Langmuir probe, shows solitary waves travelling away from the magnetron target. The velocity of the waves depends on the gas pressure but is roughly independent of the pulse energy.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Ion-acoustic solitary waves in a high power pulsed magnetron sputtering discharge

Gylfason¹,

Alami²,

Helmersson³

et al. 2005

J. Phys. D: Appl. Phys.

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“…During such arcing micro particles may be formed resulting in a coating with undesirable inclusions of micro particles. To overcome this problem it has become quite popular to use a pulsed direct current (DC) power in the form of high negative pulses interrupted by small positive pulses (arc suppression) [19][20]. In this way the charge at the oxide surface on the target may be neutralized by attracting electrons during the positive part of the duty cycle.…”

Section: Introductionmentioning

confidence: 99%

Development of Zirconium Thin Films by Pulsed Direct Current Magnetron Sputtering: Effect of Pulsed Parameters

Singh¹,

Kuppusami²,

Thirumurugesan³

et al. 2014

Int. Jour. Des. Manf. Tech.

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This paper characterizes phases present in thin Zr films at 773 K of substrate temperature. The effect of pulsed parameters such as pulse frequency, duty cycle and pulse power during the deposition of Zr film on Si(100) at the substrate temperature of 773 K has been studied. Formation of α-phase of zirconium was noticed with (001) preferred orientation at 773 K. Preferred orientation was found to be influenced by the pulse parameters. It is noticed that crystallite size decreased with increasing frequency and duty cycle, whereas it increased with increasing pulse power. Nanoindentation measurements indicted that the hardness of the films was in the range 4-8 GPa as a function of pulsed parameters.

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“…7,21,22 The development of high-power semiconductor switches allowed the fabrication of power supplies for pulsed magnetrons operating in mid-frequency range of 10-100 kHz, and in some cases up 350 kHz. 7,[23][24][25] This has the advantage that arcing processes are reduced to a level that arcing do not significantly affect the quality of the sputter-deposition process. 7,19 Power supplies with asymmetric bi-polar voltage and current pulse shapes are designed to sputter targets at negative pulse polarity and remove accumulated surface charge by allowing plasma electrons to arrive on the surface during positive polarity phase of the pulse cycle.…”

mentioning

confidence: 99%

Sputtering of pure boron using a magnetron without a radio-frequency supply

Окс

Anders

Nikolaev

et al. 2017

Review of Scientific Instruments

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Boron at room temperature is insulating and therefore conventionally sputtered using radiofrequency (RF) power supplies including their power-matching networks. In this contribution we show that through a suitable ignition assistance, via temporary application of a high voltage (~ 600 V) to the substrate holder or auxiliary electrode, the magnetron discharge can be ignited using a conventional mid-frequency power supply without matching network.Once the discharge is ignited, the assisting voltage can be reduced to less than 50 V, and after the boron target surface is at elevated temperature, thereby exhibiting sufficient conductivity, the assisting voltage can be turned off. The deposition of boron and boron nitride films has been demonstrated with a deposition rate of approximately 400 nm/h for a power of 250 W.

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Pulsed magnetron sputter technology

Cited by 318 publications

References 8 publications

Ion-acoustic solitary waves in a high power pulsed magnetron sputtering discharge

Ion-acoustic solitary waves in a high power pulsed magnetron sputtering discharge

Development of Zirconium Thin Films by Pulsed Direct Current Magnetron Sputtering: Effect of Pulsed Parameters

Sputtering of pure boron using a magnetron without a radio-frequency supply

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