2006
DOI: 10.1063/1.2213950
|View full text |Cite
|
Sign up to set email alerts
|

Pulsed mode operation of strained microelectromechanical resonators in air

Abstract: Articles you may be interested inMicroresonators with Q-factors over a million from highly stressed epitaxial silicon carbide on silicon Appl. Phys. Lett. 104, 081901 (2014); 10.1063/1.4866268Stress-based resonant volatile gas microsensor operated near the critically buckled state

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

3
44
0

Year Published

2007
2007
2011
2011

Publication Types

Select...
8

Relationship

3
5

Authors

Journals

citations
Cited by 40 publications
(47 citation statements)
references
References 24 publications
3
44
0
Order By: Relevance
“…In particular, we study circular monolayer graphene sheets that are similar geometrically to the circular multilayer graphene oxide sheets that have recently been fabricated and tested 8 , and where extremely high Q-factors with values up to 4000 have been found. In addition, the graphene oxide multilayers studied by Robinson et al 8 were under tensile stress, which has recently proven beneficial in enhancing the Q-factors of both metallic 18 and semiconducting nanowires 19,20,21 ;…”
Section: Resultsmentioning
confidence: 99%
“…In particular, we study circular monolayer graphene sheets that are similar geometrically to the circular multilayer graphene oxide sheets that have recently been fabricated and tested 8 , and where extremely high Q-factors with values up to 4000 have been found. In addition, the graphene oxide multilayers studied by Robinson et al 8 were under tensile stress, which has recently proven beneficial in enhancing the Q-factors of both metallic 18 and semiconducting nanowires 19,20,21 ;…”
Section: Resultsmentioning
confidence: 99%
“…7). Similarly, other researchers [124] fabricated AlN and SiC NEMS resonators on silicon substrates, then induced tensile strain in the NEMS by utilizing the thermal expansion mismatch between the NEMS and substrate. Qfactor enhancements of about one order of magnitude were reported for 50-250 nm thick NEMS with strains of about 0.0026%.…”
Section: Q-factorsmentioning
confidence: 99%
“…Furthermore, the current findings can be experimentally validated, as recent experiments have indicated the ability to apply axial strain to nanowires [10]; we note again that experiments have demonstrated the utility of mechanical stress in improving the Q factors of 100 nm cross section SiN, Si, and SiC nanowires [10,11]. We also find that the nanowire Q factors are dependent on the aspect ratio, and not the surface area to volume ratio, and that the type of boundary condition applied to the nanowires should strongly impact the available Q factor, where fixed/fixed nanowires are expected to have higher intrinsic Q factors than fixed/free nanowires of the same size.…”
mentioning
confidence: 86%
“…One approach that has shown promise is to passivate the dangling bonds at the nanowire surfaces, for example, passivating Si surfaces with hydrogen [7]. Other researchers have had success increasing the Q factors of SiN, Si, and SiC nanowires through the application of tensile stress [10,11]; however, the 100 nm cross section nanowires utilized in those works indicate size scales at which surface losses may not dominate the Q-factor degradation. Therefore, a systematic means of combatting the intrinsic dissipation mechanisms in nanowires remains a significant and open research topic.…”
mentioning
confidence: 99%