No abstract

No abstract

Wide-bandgap semiconductors represent an attractive option to meet the increasing demands of micro- and nano-electromechanical systems (MEMS/NEMS) by offering new functionalities, high stability, biocompatibility and the potential for miniaturization and integration. Here, we report on resonant MEMS and NEMS devices with functional layers of SiC, AlN and AlGaN/GaN heterostructures on different substrates, which have been investigated and analysed in the course of an interdisciplinary research focus programme of the German Research Foundation (DFG). The specific deposition and etching technologies necessary for the three-dimensional micro-structuring are explained. Further, the implementation of appropriate electromechanical transduction schemes is discussed. In case of SiC and AlN resonators, actuation and sensing was achieved by a magnetomotive scheme. A piezoelectric coupling scheme where the counter electrode is formed by the two-dimensional electron gas at the interface of the III/V heterostructure was realized for the AlGaN/GaN resonators. Thus, flexural and longitudinal vibration modes were excited and characterized using electrical and optical techniques. The measured key parameters of resonant frequency and quality factor are related to geometry, material and environmental parameters using analytical and finite element (FE) models. Finally, potential sensor applications are experimentally investigated

Articles you may be interested inMicroresonators with Q-factors over a million from highly stressed epitaxial silicon carbide on silicon Appl. Phys. Lett. 104, 081901 (2014); 10.1063/1.4866268Stress-based resonant volatile gas microsensor operated near the critically buckled state

AlN nanowires with a diameter of 20 nm were grown stochastically by the vapour-liquid-solid (VLS) method. At low temperatures below 1000 °C the Kirkendall effect during the alloying of aluminium and the catalyst resulted in the formation of three-dimensional nanostructures like lamellas and nano flowers. The high temperatures above 1000 °C, which are necessary to grow the nanowires complicate the control of their formation. Small catalyst droplets of 20 nm diameter are not stable due to their evaporation. Thus, in contrast to the classical approach to grow a single nano wire out of one droplet, we grew dense networks of nanowires inside larger 3D structures with diameters up to 5 µm. Depending on the growth temperature and the droplet geometry the nanowires inside of these networks are connected by angles of 90° ("cubic") or 120° ("hexagonal").