Pulsed multi-tone measurements for time domain load pull characterizations of power transistors

Groote, Fabien de; Roblin, Patrick; Ko, Youngseo; Yang, Chieh-Kai; Doo, Seok Joo; Bossche, Marc Vanden; Teyssier, Jean-Pierre

doi:10.1109/arftg.2009.5278072

Cited by 11 publications

(5 citation statements)

References 13 publications

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“…Pulsed-RF RTALP with a large signal network analyzer (LSNA) was used to acquire the load-pull data at 2 GHz [4]. Pulse widths of 1.9µs and 1.3µs were used respectively for the RF pulses at the input and output (active load pull).…”

Section: Measurement Results and Discussionmentioning

confidence: 99%

“…Thus considering design efficiency and measurement equipment limitation, the duty rate was selected to be 1.2%. Note that smaller duty rates are possible [4] but at the cost of proportionately longer acquisition times. Fig.…”

Section: Measurement Results and Discussionmentioning

confidence: 99%

“…However with the help of real-time active load-pull (RTALP), the measurement time can be significantly reduced [5]. Furthermore, in order to predict realistic PAE for PAs for high PAPR excitations where high power outputs rarely happen, pulsed-RF RTALP measurements with 1.2% duty rate will be used [4]. The need for pulsed RF load-pull is further warranted by the fact that the GaN HEMT testbed is not intended for CW operation at peak power.…”

Section: Introductionmentioning

confidence: 99%

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Pulsed load-pull based optimal load-modulation PA design methodology for average efficiency enhancement

Jang

Roblin

et al. 2011

78th ARFTG Microwave Measurement Conference

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A new load-modulation based power amplifier design scheme is proposed for average power added efficiency (PAE) enhancement. An algorithm for choosing the optimal operating conditions from load-pull data with swept input power is presented. The optimal conditions for the joint control of the inputs power and the tunable output matching network for dynamic load-modulation are extracted and demonstrated using a commercial 15W GaN HEMT transistor. Instead of the PAE peaking only at high output power, greater than 60% PAE over 10 dB output power range is predicted in simulation for class-AB operation. Pulsed-RF real time active load-pull measurements with 1.9µs pulse width and 1.2% duty rate are then performed for swept input power to approximate high peak-to-average power ratio operation. Additional pulsed-RF active load-pull measurements are further used at the selected optimal loads for verification. Greater than 60% PAE over 7 dB are observed using both measurement techniques.Index Terms-load-modulation, average efficiency, pulsed realtime active load-pull (pRTALP).

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Section: Measurement Results and Discussionmentioning

confidence: 99%

Section: Measurement Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Pulsed load-pull based optimal load-modulation PA design methodology for average efficiency enhancement

Jang

Roblin

et al. 2011

78th ARFTG Microwave Measurement Conference

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“…For this purpose, RTALP measurements with different sweeping/offset frequencies could be used as a probe of the P-BJT frequency response. Pulsed-RTALP [20], which is immune from low-frequency memory effects, could then provide a reference measurement for studying such dynamic effects.…”

Section: Discussionmentioning

confidence: 99%

Artificial Neural Network Model of SOS-MOSFETs Based on Dynamic Large-Signal Measurements

Roblin

Landa

et al. 2014

IEEE Trans. Microwave Theory Techn.

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A measurement-based quasi-static nonlinear field-effect transistor (FET) model relying on an artificial neural network (ANN) approach and using real-time active load-pull (RTALP) measurement data for the model extraction is presented for an SOS-MOSFET. The efficient phase sweeping of the RTALP drastically reduces the number of large-signal measurements needed for the model development and verification while maintaining the same intrinsic voltage coverage as in conventional passive or active load-pull systems. Memory effects associated with the parasitic bipolar junction transistor (BJT) in the SOS-MOSFET are accounted for by using a physical circuit topology together with the simultaneous ANN extraction of: 1) the intrinsic FET current-voltage characteristics; 2) the intrinsic charges of the FET; and 3) the BJT dc characteristics, all from the same modulated large-signal RF data. The verification of the model using load-lines, output power, power efficiency, and load-pull, which is performed using two additional independent RTALP measurements, demonstrates that a reasonably accurate large-signal RF device model accounting for memory effects can be extracted from a single 10.5-ms RTALP measurement with a physically based ANN model. Index Terms-Artificial neural network (ANN), large-signal network analyzer (LSNA), memory effects, MOSFET, parasitic bipolar junction transistor (P-BJT), real-time active load-pull (RTALP).

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“…I using raw data for Tp = 10j.ls and T = 100j.ls. The aliasing problem can be surcumvented by sorting the ADC samples [4] [5]. AI thought this method does not reduce dynamic range, but it requires accurate timing and triggering accompanied with a complex circuitry.…”

Section: Introductionmentioning

confidence: 99%

A new method to measure pulsed RF time domain waveforms with a sub-sampling system

Reveyrand

Popović

2012

2012 IEEE/MTT-S International Microwave Symposium Digest

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Pulsed multi-tone measurements for time domain load pull characterizations of power transistors

Cited by 11 publications

References 13 publications

Pulsed load-pull based optimal load-modulation PA design methodology for average efficiency enhancement

Pulsed load-pull based optimal load-modulation PA design methodology for average efficiency enhancement

Artificial Neural Network Model of SOS-MOSFETs Based on Dynamic Large-Signal Measurements

A new method to measure pulsed RF time domain waveforms with a sub-sampling system

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