Pupil plane analysis on AIMS 45-193i for advanced photomasks

Morikawa, Yasutaka; Sutou, Takanori; Mesuda, Kei; Nagai, Tomoaki; Inazuki, Yuichi; Adachi, Takashi; Toyama, Nobuhito; Mohri, Hiroshi; Hayashi, Naoya; Stroessner, Ulrich; Birkner, Robert; Richter, Rigo; Scheruebl, Thomas

doi:10.1117/12.711664

Cited by 5 publications

(2 citation statements)

References 4 publications

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“…However, for mask characterization is might be of interest to collect data also for oblique incidence. An interesting study for characterizing mask by measuring the mask diffraction orders by AIMS measurements in the pupil plane is given in [16]. For all pitches no bias to the 180deg shifter was applied and the trench depth was not optimized either.…”

Section: J Ddsmentioning

confidence: 99%

Rigorous simulation study of mask gratings at conical illumination

Köhle¹

2007

SPIE Proceedings

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For immersion technology the mask is illuminated under large angles and the features sizes are approaching the illuminating wavelength. At such operating conditions, several publications have shown rigorous diffraction effects having a noticeable effect on the aerial image. For the Kirchhoff assumption, which is commonly employed in lithography simulation, the mask is assumed to be an infinity thin transparency. This assumption implies the diffracted spectrum to be independent of the incident illumination angle and no coupling between polarization states occurs. This work is a fundamental study to deepen the understanding of rigorous off-axis effects for current and future mask technologies. This paper will show simulation studies for standard attenuated-and alternating mask gratings, which look at the diffracted spectrum of a mask grating with respect to polarization orientation and off-axis angle of the illuminating wave.

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Section: J Ddsmentioning

confidence: 99%

Rigorous simulation study of mask gratings at conical illumination

Köhle¹

2007

SPIE Proceedings

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“…1932-5150/2011/$25.00 C 2011 SPIE For the effect of a pellicle on the CDU, we refer to an early evidence 5 of CDU increase due to the pellicle presence for 180 nm wide resist lines. In the study by Morikawa et al 6 an increased CDU of 45-nm features (NA 1.4) is measured by AIMS in the presence of a pellicle. However, in none of these studies is a correlation to the pellicle thickness uniformity map made.…”

Section: Introductionmentioning

confidence: 99%

Pellicle contribution to optical proximity and critical dimension uniformity for 1.35 numerical aperture immersion ArF lithography

Look

Bekaert

Laenens

et al. 2011

J. Micro/Nanolith. MEMS MOEMS

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Pellicles are mounted on the masks used in ArF lithography for integrated circuit manufacturing to ensure defect-free printing. The pellicle, a thin transparent polymer film, protects the reticle from dust. But, as the light transmittance through the pellicle has an angular dependency, the pellicle also acts as an apodization filter. In the current work, we present both experimental and simulation results at 1.35 numerical aperture immersion ArF lithography showing the influence of two types of pellicles on proximity and intra-die critical dimension uniformity (CDU). To do so, we mounted and dismounted the different pellicle types on one and the same mask. The considered structures on wafer are compatible with the 32-nm logic node for poly and metal. For the standard ArF pellicle (thickness 830 nm), we experimentally observe a distinct effect of several nm due to the pellicle presence on both the proximity and the intra-die CDU. For the more advanced pellicle (thickness 280 nm), no signature of the pellicle on proximity or CDU could be found. By modeling the pellicle's optical properties as a Jones Pupil, we are able to simulate the pellicle effects with good accuracy. These results indicate that for the 32-nm node, it is recommended to take the pellicle properties into account in the optical proximity correction calculation when using a standard pellicle. In addition, simulations also indicate that a local dose correction can compensate to a large extent for the intra-die pellicle effect. When using the more advanced thin pellicle (280 nm), no such corrections are needed. C 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).

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Wafer level critical dimension control in spacer-defined double patterning for sub-72 nm pitch logic technology

Kim

Watso²,

Dommelen³

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Fabrication of sub-100-nm metal-oxide-semiconductor field-effect transistors with asymmetrical source/drain using I-line double patterning techniqueOptimization of critical dimension (CD) uniformity during a spacer-defined double patterning process was explored. Image log-slope (ILS) was used as a major metric in optimizing the CD uniformity as well as the vertical sidewall of the developed resist pattern, which was used as a core-mandrel. In aerial image optimization, mask CD, mask pitch, target CD, defocus, and illumination settings were identified as influential factors in the CD uniformity. An over-exposure from a large mask CD was discovered to be beneficial to the CD maintenance as was a vertical sidewall of the resist pattern, although the CD uniformity across the focus reversely deteriorates with an increase in the ILS. As for wafer-level CD uniformity control, ASML's Spacer Controller was able to correct CD nonuniformity of post-etch patterns across the intra-and inter-fields of the wafer by adjusting the local dose during the lithographic exposure.

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Pupil plane analysis on AIMS 45-193i for advanced photomasks

Cited by 5 publications

References 4 publications

Rigorous simulation study of mask gratings at conical illumination

Rigorous simulation study of mask gratings at conical illumination

Pellicle contribution to optical proximity and critical dimension uniformity for 1.35 numerical aperture immersion ArF lithography

Wafer level critical dimension control in spacer-defined double patterning for sub-72 nm pitch logic technology

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