2000
DOI: 10.1006/jmsp.2000.8118
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Pure Rotational Spectrum of HCN in the Terahertz Region: Use of a New Planar Schottky Diode Multiplier

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Cited by 42 publications
(27 citation statements)
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“…Hence, several techniques have been employed to cover this large spectral range. In the regime from 64 ± 178 GHz, a commercial spectrometer was used, [34] while radiation in the shorter millimeter-wave regime from 180 ± 208 GHz was generated by employing a commercial 4 mm-wave synthesizer in connection with a planar Schottky Diode Multiplier [35] to make use of the third harmonic of the fundamental. The majority of lines were measured in the frequency region from 480 ± 945 GHz by employing the Cologne Terahertz Spectrometer.…”
Section: Mass-spectrometric Instrumentationmentioning
confidence: 99%
“…Hence, several techniques have been employed to cover this large spectral range. In the regime from 64 ± 178 GHz, a commercial spectrometer was used, [34] while radiation in the shorter millimeter-wave regime from 180 ± 208 GHz was generated by employing a commercial 4 mm-wave synthesizer in connection with a planar Schottky Diode Multiplier [35] to make use of the third harmonic of the fundamental. The majority of lines were measured in the frequency region from 480 ± 945 GHz by employing the Cologne Terahertz Spectrometer.…”
Section: Mass-spectrometric Instrumentationmentioning
confidence: 99%
“…However, the present sources of THz radiation present "hurdles" because of their limited tunable bandwidth and output power, and some require fragile, large, and expensive femtosecond lasers or even particle accelerators (Zhang, 2002). Some of the methods that have been used to generate THz radiation are backward wave oscillators with chains of frequency multipliers (Maiwald et al, 2000), the Smith-Purcell Effect (Mross et al, 2003), quantum cascade lasers (Davies et al, 2002), synchrotron radiation from high-energy accelerators (Carr et al, 2002), bulk electro-optic rectification and ultrafast charge transport in semiconductors (Davies et al, 2002), and photomixing in semiconductors (Verghese et al, 1997). For example, photomixing (optical heterodyning) of two lasers at different wavelengths in low-temperature-grown (LTG) GaAs at the feed point of an antenna can generate an output power of only 1 µW at 1 THz, which falls off by 12 dB per octave or 1/F 4 at higher frequencies (F), so the power is reduced to 100 pW at 10 THz.…”
Section: Introductionmentioning
confidence: 99%
“…The diode resistance includes the resistances of the semiconductor bulk, contact connections, and diode outputs. At present, the capacitance of a Schottky diode with an active-region area of about a few squared microns amounts to no less than 3 fF [13][14][15], whereas a decrease in the diode series resistance with increasing semiconductor doping is limited by the dope concentration 5 · 10 17 cm −3 [14,15].…”
mentioning
confidence: 99%
“…On the one hand, the limiting frequency is determined by the features of physical processes taking place in the semiconductor structure, in particular by the inertia of electrons during their transit through the active region in the case of Schottky diodes. Thus, the transit time for the best diodes is about 1 ps [15]. On the other hand, the limiting frequency is largely stipulated by the influence of the parasitic capacitance C and series resistance R s of the diode: f o = 1/(2πR s C).…”
mentioning
confidence: 99%
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