Purging of Front-Opening Unified Pod with Nitrogen for 300 mm Wafer Manufacturing

Hu, Shih−Cheng; Tsao, Jhy−Ming

doi:10.1143/jjap.45.5269

Cited by 13 publications

(5 citation statements)

References 4 publications

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“…Hu et al conducted a series of parametrical studies on the purging of a FOUP designed for 300 mm wafers by N 2 . 51,52 The findings show that the N 2 gas entering through a plenum injector with 60 degrees diverging resulted in an improved performance as compared with a larger entrance angle. The non-uniform N 2 inlet gas profile of the first slot induced by the inlet configuration was the primary reason for the slow moisture depletion in the first wafer.…”

Section: Minimization Of Amcsmentioning

confidence: 94%

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Review—Airborne Molecular Contamination: Recent Developments in the Understanding and Minimization for Advanced Semiconductor Device Manufacturing

Den

Garza

et al. 2020

ECS J. Solid State Sci. Technol.

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This review paper focuses on the recent knowledge about airborne molecular contamination (AMC) and its impacts on 300-mm wafer fabrication processes. The adverse impacts on process materials by both organic and inorganic micro-contaminants, and evidence of cross-contamination between processed wafers and the mainstream wafer handling tools, are two areas of discussion for the study. The review also aims to re-frame the industrial guideline for AMC from chemical-based to risk-based approach, which substantiates the potential impacts of individual families of AMCs that have been well-documented. This approach resonates well with the new AMC classification method recently proposed by the International Roadmap of Devices and Systems (IRDS), building on new knowledge of AMC emerged over time with the advances of analytical and testing capability. The review also brings forth the impact of moisture, the mere presence of which can compromise the integrity of device structures. However, moisture is especially detrimental in the presence of other inorganic ions to trigger unwanted reactions with surface materials. Methods developed to minimize the micro-contaminants and moisture during wafer handling and storage are also reviewed.

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Section: Minimization Of Amcsmentioning

confidence: 94%

“…One of the solutions to alleviate induced vibrations is to install diffusers at the purge inlets. 54,55 These diffusers are long, circular, porous tubes that can evenly distribute the purging gas (N 2 or CDA) in a FOUP while maintaining laminar flow.…”

Section: Minimization Of Amcsmentioning

confidence: 99%

Review—Airborne Molecular Contamination: Recent Developments in the Understanding and Minimization for Advanced Semiconductor Device Manufacturing

Den

Garza

et al. 2020

ECS J. Solid State Sci. Technol.

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“…It is again superior to decrease the consumption of purging gas to reduce the cost. (Testing flow rate of 0.25-2.4 L/min at 300 mm PC wafer FOUP) [5]. …”

Section: Effect Of Purge Time On the Purging Gas Flow Ratementioning

confidence: 99%

Pre-particle filtration and moisture control by efficient purging in various inlet and outlet of a 450 mm wafer front-opening unified pod

Chiu¹,

Hu²,

Shiue

et al. 2015

IJET

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The trend toward narrower line width in semiconductor manufacturing has made contamination control more and more important. The presence of moisture in wafer containers, such as front opening unified pods (FOUP), can lead to the native oxide residues growth, metal corrosion, and thin film cracking on wafer surfaces. Accordingly, decreasing contamination methods and improving factory efficiency are continuously researched. Single or multi-layer particulate shields on top of wafers in FOUPs may be used to prevent pollutant accumulation. In addition, point-of-use (POU) filtration may also been used to control particle contamination in FOUPs during wafer transformation and storage. The demand for stricter filtration led to the usage of 0.10 and 0.20 µm membranes to control the contamination. However, with the introduction of finer membranes end users may have concerns about deleterious remainders on wafers from undergoing filtration. There are a total of 25 pieces of wafers in the FOUP and the arrangement is from the bottom (wafer No. 1) to the top (wafer No. 25) with arising manner. Purging FOUPs to expel moisture vapors with Clean Dry Air (CDA) is one of the most popular methods. There was no previous research for investigating the purge performance on new-generation 450mm FOUPs. This research aims to study main factors influencing the performance of the purge system on 450mm FOUPs, including moisture concentration, CDA flow rate, and filter pressure.

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“…To prevent this kind of contamination by exposure to the air, wafers on which chip is formed are stored or moved in the enclosed carrier called front opening unified pod (FOUP) and particles or AMCs remaining on wafers may diffuse into FOUP and contaminate it (Frickinger et al, 2000;Hu et al, 2005;Hu et al, 2009). Particles or AMCs adsorb onto inside of FOUP which can contaminate other wafers and FOUPs like a "contagious disease" and therefore various researches on FOUP cleaning and purge are in progress (Hu and Tsao, 2006;Hu et al, 2007;Yoo et al, 2012).…”

Section: Introductionmentioning

confidence: 99%

Influence of Fluoride Ions Contamination in Front Opening Unified Pod (FOUP) Generating Defective Bonding Pad

Kwon

Hwang

Kim

et al. 2017

Aerosol Air Qual. Res.

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We analyzed defective bonding pad in various ways and determined the causes of defects that boosts oxidation of aluminium by fluoride residue on surface of pad with moisture. Additionally, we compared and evaluated methods to minimize pad defects in aspects such as etching and wafer storage environment. In case of wafers after pad open etching process using common CF 4 stored in FOUP, the concentration of fluoride ions in FOUP was 230 ng L -1 and it decreased down to 170 ng L -1 when Ar sputtering step was added after using CF 4 . Also under the same condition, fluoride ion concentration in FOUP decreased down to 20 ng L -1 when nitrogen purge was introduced for 10 minutes to the FOUP where wafers were stored and the moisture also decreased from 40% before purge to 10% after purge. As a result of observation on pad surface after storing wafers in FOUP for 120 hours under each condition, negligible amount of defects were found when nitrogen was purged. Therefore, we conclude that defects on pad were generated by existing fluoride ions after etching process and moisture in the air.

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Purging of Front-Opening Unified Pod with Nitrogen for 300 mm Wafer Manufacturing

Cited by 13 publications

References 4 publications

Review—Airborne Molecular Contamination: Recent Developments in the Understanding and Minimization for Advanced Semiconductor Device Manufacturing

Review—Airborne Molecular Contamination: Recent Developments in the Understanding and Minimization for Advanced Semiconductor Device Manufacturing

Pre-particle filtration and moisture control by efficient purging in various inlet and outlet of a 450 mm wafer front-opening unified pod

Influence of Fluoride Ions Contamination in Front Opening Unified Pod (FOUP) Generating Defective Bonding Pad

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