Qualitative analysis of gain spectra of InGaAlAs/InP lasing nano-heterostructure

Abstract

This paper deals with the studies of lasing characteristics along with the gain spectra of compressively strained and step SCH based In 0.71 Ga 0.21 Al 0.08 As/InP lasing nano-heterostructure within TE polarization mode, taking into account the variation in well width of the single quantum well of the nano-heterostructure. In addition, the compressive conduction and valence bands dispersion profiles for quantum well of the material composition In 0.71 Ga 0.21 Al 0.08 As at temperature 300 K and strain ~1.12% have been studied using 4 × 4 Luttinger Hamiltonian. For the proposed nano-heterostructure, the quantum well width dependence of differential gain, refractive index change and relaxation oscillation frequency with current density have been studied. Moreover, the G–J characteristics of the nano-heterostructure at different well widths have also been investigated, that provided significant information about threshold current density, threshold gain and transparency current density. The results obtained in the study of nano-heterostructure suggest that the gain and relaxation oscillation frequency both are decreased with increasing quantum well width but the required lasing wavelength is found to shift towards higher values. On behalf of qualitative analysis of the structure, the well width of 6 nm is found more suitable for lasing action at the wavelength of 1.55 μm due to minimum optical attenuation and minimum dispersion within the waveguide. The results achieved are, therefore, very important in the emerging area of nano-optoelectronics.

An Investigation of Optical Gain of Nanomaterial AlGaAsIn/InP under CTLSs in Optical Communications

“…It has been clear that, now a day in the nano technological electronics and optical communication the yielding of optical gain [6,8,9,11] has substantial role due its unique light properties. Commonly, the profit in optical light is given by yielding of light per unit original light intensity and per unit length of active region of structure.…”

A Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments

“…Both of them have their distinguished features in different regime of wavelengths. Most of the type-I and type-II heterostructures has shown their utility in the visible region and near infrared region (NIR) [1][2][3][4][5][6]; some have been found to play their role in MIR (mid infrared region) or SWIR (shortwave infrared region) as well as in FIR (far infrared region) [7]- [11]. Recently, nitride based type-II heterostructures have also been reported for UV (ultra violet) applications.…”

Computational Analysis of Optical Gain Characteristics of Al0.15In0.22Ga0.63As/GaAs Nano Heterostructure

“…Even, the GRIN-SCH based lasing nano heterostructures have been reported to have various advantages over STIN-SCH based nano heterostructures such as higher injection efficiency, higher trapping efficiency, and noticeably shorter doping time and enhanced carrier confinement, but still STIN-SCH based nano-heterostructures are very useful lasing sources for optical fiber based communication systems due to sharp optical gain intensity at the wavelength of very low attenuation and cost effective fabrication. Moreover, the reason for choosing the STIN-SCH based nano-heterostructures rather than GRIN-SCH based structures is that the enhancement rates of the threshold current and the slope efficiency of graded-index SCH (GRIN-SCH) decrease with the increasing number of GRIN layers [8,9]. So far, the different nano-scale heterostructures of type -I category reported till date have been studied and analyzed.…”