Qualitative Interpretation of Etch Profile Nonuniformity Using a Wavelet and a Neural Network

Lee, Hak Sung; Kim, Byungwhan; Choi, Serk Rim; Hong, Won G.; Lee, Kyeong Kyun; Choi, Won Sun; Lim, Myo Taeg

doi:10.3938/jkps.43.817

Cited by 3 publications

(1 citation statement)

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“…To predict geometry of etched structure must consider information of surface reactions [4][5]. Like semiconductor process, the exact understanding of etched result in MEMS device has reduced wasted time and the number of micro-fabrication test iterations.…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional numerical simulation for anisotropic wet chemical etching process

Lee

Won

2007

Molecular Simulation

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In this paper, we present result on the development of a simulation tool for the three-dimensional anisotropic wet chemical etching for bulk micromaching. Our developed simulator comprises step of calculation the movement of the surface. It is based upon the data structure with movement of the surface cell list which has list and list 2, respectively. The surface cell has the topography evolution information which has etch properties according to crystallographic position of surface cell and cell volume value. The topography evolution information evolves movement of the surface. The performance of our developed simulator was investigated with our three-dimensional simulation results. Several simulation results demonstrate our simulation tool which is quite efficient for the design and development of MEMS device structure. The developed simulator demonstrates the applicability of complex three-dimensional MEMS device structure. We demonstrate the simulation of the anisotropic wet chemical etching process of basic exemplary structures featuring the virtual fabrication of an MEMS structure manufactured by means of bulk micromachining.

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Section: Introductionmentioning

confidence: 99%

Three-dimensional numerical simulation for anisotropic wet chemical etching process

Lee

Won

2007

Molecular Simulation

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Prediction of silicon dry etching using a piecewise linear algorithm

Jimenez-Fernandez

Reyes-Betanzo

Angelica-Cerdan

et al. 2013

Journal of the Chinese Institute of Engineers

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Effect of UV Illumination on Deposition of Low-k Si-O-C(-H) Films by PECVD

Lee

Yang

Choi

2004

MSF

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The characteristics of plasma are important for the deposition of SiOC(-H) low dielectric thin film. The effect of UV light illumination on the plasma parameter in the capacitive coupled plasma chemical vapor deposition (CCP-CVD) system is investigated. The electron density is almost not changed, but the electron temperature decreases by UV light illumination. The deposition rate increases and the dielectric constant of the film is lowered with UV light.

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Qualitative Interpretation of Etch Profile Nonuniformity Using a Wavelet and a Neural Network

Cited by 3 publications

References 0 publications

Three-dimensional numerical simulation for anisotropic wet chemical etching process

Three-dimensional numerical simulation for anisotropic wet chemical etching process

Prediction of silicon dry etching using a piecewise linear algorithm

Effect of UV Illumination on Deposition of Low-k Si-O-C(-H) Films by PECVD

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