Quality improvement of ZnO thin layers overgrown on Si(100) substrates at room temperature by nitridation pretreatment

Wang, Peng; Jin, Chuang; Wu, Xuefeng; Zhan, Huahan; Zhou, Yinghui; Wang, Hui‐Qiong; Kang, Junyong

doi:10.1063/1.4723852

Cited by 13 publications

(9 citation statements)

References 17 publications

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“…The crystallinities and morphologies of ZnO-based films have been the focus of many studies [ 9 , 11 , 12 , 15 , 16 , 19 , 21 , 23 – 25 ], as these properties play important roles in device applications. Most ZnO films, including those grown by PLD [ 12 ], molecular beam epitaxy (MBE) [ 24 ], MOCVD [ 25 ], and MS [ 13 , 21 , 22 ], have shown “particle-like” surface morphologies. Unconventional surface morphologies, such as networked nanostructures, nanosheets, columnar nanorods [ 28 ], and maize corn seed-like morphologies [ 29 ], have also been reported.…”

Section: Introductionmentioning

confidence: 99%

Tuning the Surface Morphologies and Properties of ZnO Films by the Design of Interfacial Layer

Wang

Zhou

et al. 2017

Nanoscale Res Lett

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Wurtzite ZnO films were grown on MgO(111) substrates by plasma-assisted molecular beam epitaxy (MBE). Different initial growth conditions were designed to monitor the film quality. All the grown ZnO films show highly (0001)-oriented textures without in-plane rotation, as illustrated by in situ reflection high-energy electron diffraction (RHEED) and ex situ X-ray diffraction (XRD). As demonstrated by atomic force microscopy (AFM) images, “ridge-like” and “particle-like” surface morphologies are observed for the ZnO films grown in a molecular O2 atmosphere with and without an initial deposition of Zn adatoms, respectively, before ZnO growth with oxygen plasma. This artificially designed interfacial layer deeply influences the final surface morphology and optical properties of the ZnO film. From room-temperature photoluminescence (PL) measurements, a strong defect-related green luminescence band appears for the ZnO film with a “particle-like” morphology but was hardly observed in the films with flat “ridge-like” surface morphologies. Our work suggests that the ZnO crystallinity can be improved and defect luminescence can be reduced by designing interfacial layers between substrates and epilayers.Electronic supplementary materialThe online version of this article (10.1186/s11671-017-2301-8) contains supplementary material, which is available to authorized users.

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Section: Introductionmentioning

confidence: 99%

Tuning the Surface Morphologies and Properties of ZnO Films by the Design of Interfacial Layer

Wang

Zhou

et al. 2017

Nanoscale Res Lett

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“…The built-in potential (qV bi ) of AZO/Si junction was also improved from 0.21 eV to 0.74 eV, indicating the heterojunction and interface quality enhancement. As previously reported, due to relatively large lattice and thermal expansion mismatch between AZO and Si, AZO thin films deposited on Si were expected to have high residual stress and heterojunction interfacial defects [45][46][47]. In this work, junction engineering was performed by adding moderate Al doping into AZO thin films via the dual-beam co-sputtering technique.…”

Section: Resultsmentioning

confidence: 94%

High-Quality ITO/Al-ZnO/n-Si Heterostructures with Junction Engineering for Improved Photovoltaic Performance

et al. 2020

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A heterostructure of Sn-doped In2O3 (ITO)/Al-doped ZnO (AZO)/n-Si was proposed and studied for photovoltaics. The top ITO worked as a transparent conducting layer for excellent optical transparency and current collection. The AZO/n-Si served as the active junction and provided the built-in potential (qVbi) for the photovoltaic devices. To achieve a higher open circuit voltage (Voc), which is the main challenge for AZO/Si heterojunctions due to the junction interfacial defects, the AZO and AZO/Si junction properties were systematically investigated. By modulating the Al doping in the AZO thin films via a dual beam co-sputtering technique, the AZO/n-Si junction quality was significantly improved with qVbi increased from 0.21 eV to 0.74 eV. As a result, the Voc of our best device was enhanced from 0.14 V to 0.42 V, with a short circuit current (Jsc) of 26.04 mA/cm2 and a conversion efficiency (Eff) of 5.03%. To our best knowledge, this is the highest Voc reported for ZnO/Si heterojunctions prepared by the sputtering method. The results confirmed the validity of our proposed structure and junction engineering approach and provided new insights and opportunities for ZnO/Si heterojunction optoelectronics.

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“…In recent years, IHJs is slowly attracting the research community to the fundamental understanding of their properties. Particularly, silicon based IHJs with large lattice mismatch (∆), for example, / (17%) [2], / (4.2%) [3] and / (40.1%) [4], were being reported to gain insight into the IHJs properties as well as their possible applications, despite experimental difficulties in accounting role of defects due to greater lattice mismatch. Generally, the − IHJs are not preferred for high-speed electronic applications due to large effective mass and less mobility of holes [2].…”

Section: Introductionmentioning

confidence: 99%

“…From the fundamental and technological point of view, the semiconductor thin film growth on substrate is attractive by considering the possibility of monolithic integration of grown thin film for different applications. Recently, for instance, / heterostructure LEDs have stirred up considerable interest in integrating onto technology [2,4,6,7]. Among the zinc chalcogenide family, possess quite interesting properties, particularly, its direct wide bandgap (~2.7 ) and intrinsic − conductivity which offers several applications in the field of optoelectronics, such as blue LEDs and lasers [8], thin film solar cells [9], second harmonic generation [10] and nonlinear switching [11].…”

Section: Introductionmentioning

confidence: 99%

Gamma irradiation effects on n-ZnSe/n-Si isotype heterojunctions

Vali

Keshav

Rajeshwari

et al. 2021

Preprint

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To get an insight into the isotype heterojunction (IHJ) properties, the influence of gamma irradiation (GI) on the structural and electrical properties of n-ZnSe/n-Si has been presented. The ZnSe thin films were deposited onto the n-Si substrate by thermal evaporation technique. The X-ray diffraction (XRD) studies revealed the nanocrystalline nature of ZnSe thin films with prominent (111) orientations. The gamma irradiated samples displayed no crystallographic phase transformation up to 10 kGy irradiation doses. But noticeable and inconsistent modifications in the different lattice parameters were observed due to irradiation-induced effects. From the analysis of I-V characteristics, it has been found a similar trend in the variation of lattice mismatch, Schottky barrier height and interface trap parameter at different irradiation doses. Thus demonstrating the poor rectification properties of n-ZnSe/n-Si IHJs due to intrinsic and gamma-induced defects, and their role in the space charge limited conduction (SCLC) mechanism that significantly dominating over the thermionic emission (TE) mechanism across the barrier.

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Quality improvement of ZnO thin layers overgrown on Si(100) substrates at room temperature by nitridation pretreatment

Cited by 13 publications

References 17 publications

Tuning the Surface Morphologies and Properties of ZnO Films by the Design of Interfacial Layer

Tuning the Surface Morphologies and Properties of ZnO Films by the Design of Interfacial Layer

High-Quality ITO/Al-ZnO/n-Si Heterostructures with Junction Engineering for Improved Photovoltaic Performance

Gamma irradiation effects on n-ZnSe/n-Si isotype heterojunctions

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