2016
DOI: 10.1039/c5ra27452d
|View full text |Cite
|
Sign up to set email alerts
|

Quality of graphene on sapphire: long-range order from helium diffraction versus lattice defects from Raman spectroscopy

Abstract: We report a new method to produce high-quality, transparent graphene/sapphire samples, using Cu as a catalyst. The starting point is a high-quality graphene layer prepared by CVD on Cu(111)/Al 2 O 3 . Graphene on sapphire is obtained in situ by evaporation of the Cu film in UHV. He-diffraction, atomic force microscopy (AFM), Raman spectroscopy and optical transmission have been used to assess the quality of graphene in a metal free area. We used helium atom scattering as a sensitive probe of the crystallinity … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

4
20
0

Year Published

2017
2017
2021
2021

Publication Types

Select...
9

Relationship

2
7

Authors

Journals

citations
Cited by 25 publications
(24 citation statements)
references
References 44 publications
4
20
0
Order By: Relevance
“…The gap of the original ZO mode increases from a value of 8.55 meV to a value of 9.66 meV, while an extra ZO mode with a gap of 5.78 meV emerges. Similar ZO gaps have been found in bilayer graphene (10 meV) [37] and on graphene on Cu/sapphire (6 meV) [38,39] and are a general feature of graphene on weakly interacting substrates [34,35,40]. The new ZO mode is exclusively localized in the hBN layers.…”
Section: A Phonon Modes In Heterostructuressupporting
confidence: 60%
“…The gap of the original ZO mode increases from a value of 8.55 meV to a value of 9.66 meV, while an extra ZO mode with a gap of 5.78 meV emerges. Similar ZO gaps have been found in bilayer graphene (10 meV) [37] and on graphene on Cu/sapphire (6 meV) [38,39] and are a general feature of graphene on weakly interacting substrates [34,35,40]. The new ZO mode is exclusively localized in the hBN layers.…”
Section: A Phonon Modes In Heterostructuressupporting
confidence: 60%
“…(1): this gives a value of 6.1 Å. As discussed above, defects in graphene have been shown to strongly reduce the value of Young's modulus [45,46]. Using our calculated thickness with our experimental bending rigidity in Eq.…”
mentioning
confidence: 71%
“…Furthermore, the sample may have defects in the form of holes. Recent experiments show a reduced bending rigidity of graphene deposited on sapphire compared to the theory [45]. The authors attribute this to defects.…”
mentioning
confidence: 84%
“…30 HAS was recently used to obtain also the bending rigidity and coupling strength of a 2D silica bilayer weakly bound on Ru. 31 Furthermore the bending rigidity and coupling strength of graphene on sapphire 32 have been measured. The latter experiment illustrates how the defect density affects the bending rigidity of the graphene.…”
Section: Bending Rigidity and Substrate Coupling Strength Of 2d Materialsmentioning
confidence: 99%