Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B4C/Si Nano-Multilayers

Abstract

Pulsed-radio frequency glow discharge optical emission spectrometry (Pulsed-RF-GDOES) has exhibited great potential for high resolution (HR) depth profiling. In this paper, the measured GDOES depth profile of 60 × Mo (3 nm)/B4C (0.3 nm)/Si (3.7 nm) was quantified by employing the newly extended Mixing-Roughness-Information depth (MRI) model. We evaluated the influences of the thickness and sputtering rate on the depth profile of very thin layers. We demonstrated that a method using the full width at half maximum (FWHM) value of the measured time-concentration profile for determining the sputtering rate and the corresponding thickness was not reliable if preferential sputtering took place upon depth profiling.

Weighting Ratio Correction Method For Depth Profiling Using Microsecond Pulsed Glow Discharge Mass Spectrometry

“…Instead, Oxley used specimens featuring the same impurity element on different substrates to build a calibration curve for that element, 33 but still cannot avoid the tedious step of building a calibration curve library when analyzing new samples; Hao assessed the factors influencing sputtering rates by developing Mixing-Roughness-Information (MRI) digital models and establishing parametric relationships. 34 This method entails iterative calculations involving a significant number of formulas, placing high demands on data accuracy and personnel expertise.…”