2016
DOI: 10.1021/acs.analchem.6b03260
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Quantification of the Void Volume in Single-Crystal Silicon

Abstract: This paper investigates the use of a method based on Cu decoration and neutron activation to determine the total volume of voids in a silicon single crystal. A measurement protocol was developed and tested in an experiment carried out with a 5 cm volume and 10 g mass high-purity natural silicon sample. The few percent uncertainty reached in the determination of the Cu concentration, at a 10 cm level, makes this method a candidate to set an upper limit to the concentration of the vacancies contributing to the v… Show more

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Cited by 5 publications
(4 citation statements)
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“…The measurement of an upper limit to the number concentration of vacancies, C vac , trapped into voids is planned by using a method based on Cu decoration and neutron activation. The method was formerly applied to a 5 cm long and 1 cm thick rectangular parallelepiped sample of natural silicon and a 1 × 10 14 cm −3 upper limit of C vac was established [14].…”
Section: Point Defectsmentioning
confidence: 99%
“…The measurement of an upper limit to the number concentration of vacancies, C vac , trapped into voids is planned by using a method based on Cu decoration and neutron activation. The method was formerly applied to a 5 cm long and 1 cm thick rectangular parallelepiped sample of natural silicon and a 1 × 10 14 cm −3 upper limit of C vac was established [14].…”
Section: Point Defectsmentioning
confidence: 99%
“…They estimated that hexavacancy V 6 is a candidate for explaining their PALS results. D'Agostino et al [4] developed a method to measure the void concentration of 10 14 cm −3 in a silicon crystal with a few percent uncertainties using Cu decoration and neutron activation.…”
Section: Introductionmentioning
confidence: 99%
“…With respect to point defects, previous Avogadro silicon materials were measured using positron lifetime and copper decoration to determine vacancies. , In addition, infrared spectroscopy was used to quantify carbon, oxygen, boron, nitrogen, and INAA to probe a large number of the remaining elements. …”
Section: Instrumental Neutron Activation Analysismentioning
confidence: 99%
“…With respect to point defects, previous Avogadro silicon materials were measured using positron lifetime and copper decoration to determine vacancies. 5,6 In addition, infrared spectroscopy was used to quantify carbon, oxygen, boron and nitrogen, 5 and INAA to probe a large number of the remaining elements. 7,8,9 With the aim of collecting experimental data on the contamination of the new material, a sample of one of the 28 Si-enriched single crystal ingots was allocated to be investigated by INAA.…”
mentioning
confidence: 99%