2015
DOI: 10.1117/12.2197838
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Quantitative analysis of CD degradation induced by the fogging effect in e-beam lithography

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Cited by 3 publications
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“…To limit the effects on groove structure from extended KOH etching, a higher ratio of exposed:unexposed area was pursued during e-beam exposure. When the ratio of exposed:unexposed grating regions grows too large, e-beam fogging can affect the resist, modifying the ultimate size of the groove features after development and degrading the fidelity of the residual resist [16]. To both minimize the over-etching effects from the KOH exposure and avoid resist fogging, an exposed:unexposed ratio of ∼6:1 was used along with a controlled KOH etch, resulting in ∼1.5 𝜇m Si plateaus at the apex of each groove in the 11.2 𝜇m groove period.…”
Section: Echelle Fabricationmentioning
confidence: 99%
“…To limit the effects on groove structure from extended KOH etching, a higher ratio of exposed:unexposed area was pursued during e-beam exposure. When the ratio of exposed:unexposed grating regions grows too large, e-beam fogging can affect the resist, modifying the ultimate size of the groove features after development and degrading the fidelity of the residual resist [16]. To both minimize the over-etching effects from the KOH exposure and avoid resist fogging, an exposed:unexposed ratio of ∼6:1 was used along with a controlled KOH etch, resulting in ∼1.5 𝜇m Si plateaus at the apex of each groove in the 11.2 𝜇m groove period.…”
Section: Echelle Fabricationmentioning
confidence: 99%