Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy

Renner, F.; Kiesel, P.; Döhler, G. H.; Kneissl, Michael; Walle, Chris G. Van de; Johnson, N. M.

doi:10.1063/1.1493229

Cited by 122 publications

(51 citation statements)

References 9 publications

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“…However, experimental investigations indicate weaker polarization than predicted, ranging from 20% (Chichibu et al 1998) to 80% (Renner et al 2002) of the theoretical value, with typical results near 50% (Zhang et al 2004). This broad variation was attributed to partial compensation of the builtin polarization by fixed defect and interface charges (Ibbetson et al 2000) or to inappropriate analysis of measured data (Brown et al 2005).…”

Section: Model and Parametersmentioning

confidence: 68%

Electron leakage effects on GaN-based light-emitting diodes

Piprek¹,

2010

Opt Quant Electron

103

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Nitride-based light-emitting diodes suffer from a reduction (droop) of the internal quantum efficiency (IQE) with increasing injection current. Using advanced device simulation, we investigate the impact of electron leakage on the IQE droop for different properties of the electron blocker layer (EBL). The simulations show a strong influence of the EBL acceptor density on the droop. We also find that the electron leakage decreases with increasing temperature, which contradicts common assumptions.

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Section: Model and Parametersmentioning

confidence: 68%

Electron leakage effects on GaN-based light-emitting diodes

Piprek¹,

2010

Opt Quant Electron

103

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“…Within the quantum wells, the polarization field separates electrons and holes, thereby reducing stimulated and spontaneous emission. However, experimental investigations of InGaN quantum wells often result in weaker built-in fields than predicted, ranging from 20% [33] to 80% [34] of the theoretical value, with typical results near 50% [35]. This broad variation has been attributed to partial compensation of the polarization field by fixed defect and interface charges [36] or to inappropriate analysis of measured data [37].…”

Section: Built-in Polarizationmentioning

confidence: 97%

Electronic Properties of InGaN/GaN Vertical‐Cavity Lasers

Piprek¹,

DenBaars

et al. 2007

Nitride Semiconductor Devices: Principles and Simulation

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“…Experimental investigations of similar quantum wells often give weaker built-in fields than predicted, ranging from 20% [11] to 80% [12] of the theoretical value, with typical results near 50% [13]. This broad variation has been attributed to partial compensation of the built-in polarization by fixed defect and interface charges [14] or to inappropriate analysis of measured data [15].…”

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confidence: 99%

Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers

Piprek

DenBaars

Nakamura

2006

IEEE Photon. Technol. Lett.

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Abstract-We investigate the effect of built-in spontaneous and piezoelectric polarization on the internal device physics of current-injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with strained InGaN quantum wells. Advanced device simulation is applied to a previously manufactured device design featuring dielectric mirrors and an indium-tin-oxide current injection layer. Contrary to common perception, we show: 1) that only a small fraction of the built-in quantum-well polarization is screened at typical injection current densities and 2) that the polarization of the AlGaN electron stopper layer has a strong effect on the VCSEL threshold current which can be partly compensated for by higher p-doping.Index Terms-Electron leakage, GaN-based light emitter, InGaN quantum well, numerical simulation, piezoelectric effect, polarization, vertical-cavity surface-emitting laser (VCSEL). P IEZOELECTRIC and spontaneous polarization is known to be much stronger in c-plane GaN-based alloys than in other III-V compounds. Extensive experimental and theoretical work has been invested in this phenomenon, and nonlinear analytical approximations have been derived for calculating the built-in polarization [1]. Polarization strongly affects radiative recombination processes in strained InGaN quantum wells which are typically employed in GaN-based light-emitting devices [2]. The polarization-induced electrostatic field leads to a separation of electrons and holes within the quantum well and thereby to a reduction of the photon emission rate. However, for GaN-based lasers, polarization effects are usually considered less important because the high density of electrons and holes in the quantum wells is assumed to screen the built-in polarization charges [3].Using advanced device simulation, we investigate the effects of polarization on the internal physics and the threshold current of InGaN-GaN laser diodes. Our software self-consistently combines wurtzite quantum well band structure calculations, radiative and nonradiative carrier recombination, carrier drift and diffusion, and optical mode computation [4]. More details of the model are described elsewhere [5]. Previously, we used a very similar model to study edge-emitting high-power InGaN-GaN lasers, demonstrating good agreement with measurements [6].Here, we focus on InGaN-GaN vertical-cavity surface-emitting lasers (VCSELs), which are expected to exhibit several Manuscript

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Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy

Cited by 122 publications

References 9 publications

Electron leakage effects on GaN-based light-emitting diodes

Electron leakage effects on GaN-based light-emitting diodes

Electronic Properties of InGaN/GaN Vertical‐Cavity Lasers

Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers

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