Quantitative Detection of Oxygen in Silicon Nitride on Silicon

Holloway, P. H.; Stein, H. J.

doi:10.1149/1.2132916

Cited by 53 publications

(18 citation statements)

References 4 publications

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“…31 Atomic concentrations at the surface, presented in Table 1 suggest a relative increase in oxygen accompanies a relative decrease in nitrogen, indicating the replacement of silicon bound nitrogen with oxygen. Depth profiling of the partially oxidised silicon nitride surface, that which is comparable to our solvent cleaned surface, carried out by Holloway and Stein, 37 indicate the formation of a graded oxynitride film with a greater proportion of Si-O character at the surface, decreasing into bulk silicon nitride at greater wafer depths. 38 The O 1s peak present in the XPS spectra of silicon nitride following RCA-1 cleaning is greatly decreased in intensity, to that on the order of contaminant carbon.…”

Section: Resultssupporting

confidence: 76%

Superconducting Diamond on Silicon Nitride for Device Applications

Bland

Thomas

Klemencic

et al. 2019

Sci Rep

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Chemical vapour deposition (CVD) grown nanocrystalline diamond is an attractive material for the fabrication of devices. For some device architectures, optimisation of its growth on silicon nitride is essential. Here, the effects of three pre-growth surface treatments, often employed as cleaning methods, were investigated. Such treatments provide control over the surface charge of the silicon nitride substrate through modification of the surface functionality, allowing for the optimisation of electrostatic diamond seeding densities. Zeta potential measurements and X-ray photoelectron spectroscopy (XPS) were used to analyse the silicon nitride surface following each treatment. Exposing silicon nitride to an oxygen plasma offered optimal surface conditions for the electrostatic self-assembly of a hydrogen-terminated diamond nanoparticle monolayer. The subsequent growth of boron-doped nanocrystalline diamond thin films on modified silicon nitride, under CVD conditions, produced coalesced films for oxygen plasma and solvent treatments, whilst pin-holing of the diamond film was observed following RCA-1 treatment. The sharpest superconducting transition was observed for diamond grown on oxygen plasma treated silicon nitride, demonstrating it to be of the least structural disorder. Modifications to the substrate surface optimise the seeding and growth processes for the fabrication of diamond on silicon nitride devices.

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Section: Resultssupporting

confidence: 76%

Superconducting Diamond on Silicon Nitride for Device Applications

Bland

Thomas

Klemencic

et al. 2019

Sci Rep

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“…Data for Si3N4 agree less well. Previous (45,46) sputter profiles of Si3N4, however, suggest that its unsputtered surfaces tend to be N-poor. Other available standards work likewise notes a problem with Si data (42).…”

Section: Resultsmentioning

confidence: 92%

X-ray photoelectron spectroscopy of alkylaminesilanes bound to metal oxide electrodes

Moses¹,

Wier²,

Lennox³

et al. 1978

Anal. Chem.

252

132

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“…The advantage of using low energy primary ions is topic.7,1 16,[123][124][125] Th ~ is obtained at 0 = 30", which ironically is near the most frequently used angle in commercial equipment. Optimum depth resolution is obtained for large incidence angles (> 60") as recently shown by Zalar'32 ( Fig.…”

Section: Thin Film Depth Profilingmentioning

confidence: 99%

Practical surface analysis: state of the art and recent developments in AES, XPS, ISS and SIMS

Hofmann

1986

Surface & Interface Analysis

100

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This review considers the well established and most frequently applied surface analysis techniques: AES, XPS, ISS and SIMS in a comparative manner, confronting fundamental principles and present instrumental performance with the requests of the scientist. The primary goal of surface analysis is the determination of the elemental composition of the outermost atomic layer of a solid. In addition, characterization of binding states, of homogeneity and of structural details will often be required. Whereas the information gathered generally contains also contributions from deeper layers, the inherent high in depth resolution of the techniques allows thin film analysis with high precision. Thus, surface analysis includes the analysis of interfaces and thin films by depth profiling. Recent progress has led to improvements e.g. in sensitivity, spectral resolution and data acquisition and handling. With the trend to high spatial resolution, surface analysis is becoming a special branch of microlocal analysis. Quantification is of primary interest. However, the variety of approaches and their dependence on instrumental parameters hamper interlaboratory comparisons, pointing out the need of standardized methods and correction procedures, of well characterized test samples and of accurate data banks. Advance in precise quantification will depend on future progress in our understanding of matrix effects and beam‐sample interactions.

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Quantitative Detection of Oxygen in Silicon Nitride on Silicon

Abstract: Es wird gezeigt, daß die Auger‐Elektronenspektroskopie in Verbindung mit der Inertgas‐Ionenzerstäubung eine leistungsfähige Methode zur Messung der Menge und Verteilung von Fremdstoffen (C, O) in dünnen (500‐2000 Å),chemisch aus der Dampfphase abgeschiedenen Si3N4‐Filmen ist.

Cited by 53 publications

References 4 publications

Superconducting Diamond on Silicon Nitride for Device Applications

Superconducting Diamond on Silicon Nitride for Device Applications

X-ray photoelectron spectroscopy of alkylaminesilanes bound to metal oxide electrodes

Practical surface analysis: state of the art and recent developments in AES, XPS, ISS and SIMS

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