Quantitative evaluation of gain and losses in quaternary lasers

Mozer, Attila J.; Hausser, S.; Pilkuhn, M. H.

doi:10.1109/jqe.1985.1072716

Cited by 48 publications

(10 citation statements)

References 27 publications

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“…By considering the range of these parameters, we practically cover all possible situations in real lasers. In fixed-wavelength lasers the actual IVBA parameters are usually evaluated via the fitting procedure, as in [55]- [57] for example, and rarely by direct absorption measurements [40]. In TLDs this procedure becomes more complex, as it is necessary to evaluate the effect of the IVBA in the passive sections on the wavelength tuning, from where the IVBA data can be acquired.…”

Section: Discussionmentioning

confidence: 99%

Performance of Widely Tunable Multi-Quantum-Well and Bulk Laser Diodes and the Main Limiting Factors

Kyritsis

Zakhleniuk

2017

IEEE J. Quantum Electron.

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The output power and tuning performance of multi-quantum-well (MQW) and bulk InGaAsP/InP-distributed Bragg reflector (DBR) tunable laser diodes (TLDs) are investigated over a wide wavelength tuning range using physics-based PICS3D and VPI laser simulation tools within the travelling-wave formalism. The key result of our simulations is the discovery of a new effect in TLDs due to intervalence band absorption (IVBA) in passive phase and DBR sections, which limits the wavelength tuning range. The physical mechanism responsible for such a behavior is a collapse of the spectral-mode selectivity by the DBR due to large IVBA losses in the phase or/and DBR sections. We fundamentally demonstrate different roles played by the IVBA in the active and passive sections of a TLD. It is shown that the IVBA in passive sections and the carrier relaxation broadening (CRB) of the Lorentzian lineshape function in the lasers' active and passive sections play a crucial role in TLD tuning operation. The IVBA coefficient k IVBA and the intraband relaxation time τ in are the major limiting factors that define the output power variation and the achievable tuning range of the lasers. Both bulk and MQW lasers with small k IVBA demonstrate a wide wavelength tuning range above 30 nm, while for large k IVBA , the tuning range drops below 10 nm. We show that the output power variation with tuning due to the CRB parameter τ in is qualitatively different in bulk and MQW TLDs. The TLD tuning and power performance is also strongly affected by the shapes of the net gain and the cavity mirror loss spectra and their mutual positioning with respect to the lasing cavity mode during the tuning. The limiting parameters k IVBA and τ in as well as gain and mirror loss spectra must be thoroughly evaluated in each TLD structure prior to the device design and optimization in order to achieve the best performance in terms of the wavelength tuning and the output power stability.

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Section: Discussionmentioning

confidence: 99%

Performance of Widely Tunable Multi-Quantum-Well and Bulk Laser Diodes and the Main Limiting Factors

Kyritsis

Zakhleniuk

2017

IEEE J. Quantum Electron.

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“…The threshold current density j th is directly related to n th from the following relation [29]: (13) where e is the electron charge, A is the monomolecular recombination coefficient (mostly associated with nonradiative recombination at point defects), B is the bimolecular recombination coefficient (principally connected with radiative recombination), and C is the Auger recombination coefficient. In InGaAsP, the A coefficient is in the range of (1-2)·10 8 s -1 at room temperature [30] [31] and is slowly reduced with a decrease in temperature [32], i.e. with an increase in an energy gap.…”

Section: The Modelmentioning

confidence: 99%

Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions

Makowiak

Nakwaski

1998

MRS Internet j. nitride semicond. res.

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A detailed threshold analysis of room-temperature pulsed operation of GaN/AlGaN/AlN verticalcavity surface-emitting lasers (VCSELs) is carried out. The model takes advantage of the latest results concerning gain in active regions, material absorption in the cladding layers, as well as cavity diffraction and scattering losses. The simulation showed that although VCSELs with single (S) or multiple (M) quantum-well (QW) active regions exhibit lower threshold currents, they are much more sensitive to any increase in optical losses than their bulk counterparts. In particular, decreasing the active region radius of gain-guided QW VCSELs below 5 µ m (which increases diffraction losses) or increasing dislocation densities (which, in turn, raises scattering losses) gives an enormous rise to their threshold currents. Therefore small-size GaN VCSELs should have an index-guided structure. In the case of MQW VCSELs, the optimal number of quantum wells strongly depends on the reflectivities of resonator mirrors. According to our study, MQW GaN lasers usually require noticeably lower threshold currents compared to SQW lasers. The optimal number of QW active layers is lower in laser structures exhibiting lower optical losses. Although the best result occurred for an active region thickness of 4 nm, threshold currents for the various sizes differ insignificantly.

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“…Knowing A, B, C, pg or TIQ, d, C'IJJ or Qp, and will allow us to find injected current density. The question [18,20,25,33]. Table 3.…”

Section: Resultsmentioning

confidence: 99%

“…One can see that the real temperature dependences are in the B and C terms. The typical values for these numbers are given in many studies and indicate the following averages, for A = 10®5~^, B =10" 12 to 10~^®C77:^/S, and C = IO^'^CTTÎ^/S [18,33]. These coefficients…”

Section: R = Nunip^^imentioning

confidence: 92%

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Auger effect on the output power of InGaAsP DH lasers

Mina

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Quantitative evaluation of gain and losses in quaternary lasers

Cited by 48 publications

References 27 publications

Performance of Widely Tunable Multi-Quantum-Well and Bulk Laser Diodes and the Main Limiting Factors

Performance of Widely Tunable Multi-Quantum-Well and Bulk Laser Diodes and the Main Limiting Factors

Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions

Auger effect on the output power of InGaAsP DH lasers

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