Quantitative pressure and strain field analysis of helium precipitates in silicon

Hueging, Norbert; Luysberg, M.; Trinkaus, H.; Tillmann, Karsten; Urban, K.

doi:10.1007/s10853-006-0153-1

J Mater Sci

2006

DOI: 10.1007/s10853-006-0153-1

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Quantitative pressure and strain field analysis of helium precipitates in silicon

Norbert Hueging

M. Luysberg

H. Trinkaus

et al.

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Cited by 16 publications

(12 citation statements)

References 22 publications

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“…Moreover, 66% of the platelets in a (001) Si crystal were oriented parallel to the surface while the (010) and (100) orientations were found with the occurrence of only 19% and 15%, respectively. 22 Now, let us consider a (strained) SiGe layer and platelets formed below the interface within the Si substrate. Since the platelets, which are introduced below the SiGe layer, act as internal dislocation sources, an efficient relaxation of the SiGe layer can be achieved.…”

mentioning

confidence: 99%

Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures

Trinkaus

Buca

Minamisawa

et al. 2012

Journal of Applied Physics

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Plastic strain relaxation of SiGe layers of different crystal orientations is analytically analyzed and compared with experimental results. First, strain relaxation induced by ion implantation and annealing, considering dislocation loop punching and loop interactions with interfaces/surfaces is discussed. A flexible curved dislocation model is used to determine the relation of critical layer thickness with strain/stress. Specific critical conditions to be fulfilled, at both the start and end of the relaxation, are discussed by introducing a quality parameter for efficient strain relaxation, defined as the ratio of real to ideal critical thickness versus strain/stress. The anisotropy of the resolved shear stress is discussed for (001) and (011) crystal orientations in comparison with the experimentally observed anisotropy of strain relaxation for Si/SiGe heterostructures.

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mentioning

confidence: 99%

Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures

Trinkaus

Buca

Minamisawa

et al. 2012

Journal of Applied Physics

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“…The surrounding fringes result from a strain-related contrast induced by the high gas pressure inside the cavities. [9][10][11] The separation distance between these He-cracks typically exceeds their mean diameter of Ϸ150 nm, resulting in a discrete array of structures preferentially oriented parallel to the surface. Control samples, annealed at 350°C for 1800 s, show the same microstructure features suggesting that the He-cracks are quite stable with respect to T Յ 350°C.…”

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confidence: 99%

H-induced subcritical crack propagation and interaction phenomena in (001) Si using He-cracks templates

et al. 2010

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“…Note that platelet shaped He cavities tend to decay into small spherical cavities in a late evolution stage usually reached during annealing. 9 The method of relaxing SiGe layers by He implantation and subsequent annealing has limitations at low and high implantation doses. At low doses, due to low spatial density of dislocation sources, unacceptable strain fluctuations have been found in the relaxed layer.…”

mentioning

confidence: 99%

Relaxation of strained pseudomorphic SixGe1−x layers on He-implanted Si/δ-Si:C/Si(100) substrates

Buca

Minamisawa

Trinkaus

et al. 2009

Applied Physics Letters

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In this letter we present a method to increase the efficiency of SiGe layer relaxation by He + ion implantation and annealing. Preferential nucleation of He platelets along a ␦-impurity layer grown in the Si substrate below the SiGe layer results in planar localization and homogenization of dislocation loop sources inducing a more uniform distribution of misfit dislocations. We demonstrate this for a thin Si:C layer grown by reduced pressure chemical vapor deposition. The optimization of the conditions for efficient relaxation and layer quality is studied with respect to the position of the Si:C layer and the process parameters. Tensile strain in Si ͑sSi͒ and sSi/ Si x Ge 1−x heterostructures is well known to enhance carrier mobility for high performance channels in complementary metal oxide semiconductor field effect transistors.1 A key achievement to fabricate such materials, compatible with industrial processes at wafer level, is the strain induced in Si films grown on strain-relaxed Si x Ge 1−x virtual substrates.2 The advantageous coupling of sSi and silicon on insulator technologies 3,4 allows device fabrication with a better control of the electrostatics and lower power consumption.We have previously introduced and demonstrated the usefulness of He + ion implantation and annealing to produce high quality thin ͑ϳ200 nm͒ relaxed SiGe layers. 5,6 This concept is based on the creation of overpressurized He filled cavities of platelet shape in the ion implanted region underneath the SiGe/Si interface during an intermediate stage of annealing. These defects eject interstitial dislocation loops that glide to the SiGe/Si interface. Here, one segment of each loop is hold at the interface as a misfit dislocation ͑MD͒ segment while the other is driven by the stress through the SiGe layer to the surface forming by this two threading dislocations ͑TDs͒. The motion of the two TDs in opposite directions results in an extension of the MD segment leading to strain relaxation of the SiGe layer. 7 The generation of dislocation loops by overpressurized He platelets has been observed in Si ͑Ref. 7͒ as well as in SiC ͑Ref. 8͒ after He + implantation and subsequent annealing. Note that platelet shaped He cavities tend to decay into small spherical cavities in a late evolution stage usually reached during annealing. The method of relaxing SiGe layers by He implantation and subsequent annealing has limitations at low and high implantation doses. At low doses, due to low spatial density of dislocation sources, unacceptable strain fluctuations have been found in the relaxed layer. In the opposite case, at high doses, even if the high density of He cavities provides a relatively regular array of dislocation sources, their broad depth distribution ͓Fig. 1͑a͔͒ favors mutual dislocation loop blocking. This limits the effective injection of mobile dislocation loops into the SiGe layer and, consequently, its degree of strain relaxation.In the present work we concentrate on the mechanism of creating overpressurized He filled platelets. We...

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Quantitative pressure and strain field analysis of helium precipitates in silicon

Cited by 16 publications

References 22 publications

Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures

Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures

H-induced subcritical crack propagation and interaction phenomena in (001) Si using He-cracks templates

Relaxation of strained pseudomorphic SixGe1−x layers on He-implanted Si/δ-Si:C/Si(100) substrates

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