H-induced subcritical crack propagation and interaction phenomena in (001) Si using He-cracks templates

Reboh, S.; Barbot, J. F.; Beaufort, M. F.; Fichtner, P.F.P.

doi:10.1063/1.3290249

Cited by 20 publications

(15 citation statements)

References 14 publications

(28 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Plasticity effects in nanocrack-tip have been predicted by calculations 32 and more recently, a mechanism of stress relaxation via plasticregime interaction of nanocracks was observed. 8 Those phenomena may be favored in highly damaged substrates.…”

Section: ͑2͒mentioning

confidence: 99%

“…9,10 This effect has been attributed to a synergy between the H-chemistry, that stabilizes the internal surface of the crack and breaks the Si-Si bond at the crack-tip, and the efficient crack pressurization provided by He. [8][9][10] Although the main physic concept of the coimplantation has been realized, it is a complex system for which the microstructure evolution strongly depends on experimental parameters, as the implantation order, energy range, and relative depth positions of H and He depth profiles.…”

Section: 2mentioning

confidence: 99%

“…4 The preferential nanocrack orientation plays a crucial role in the layer transfer process and is related to an interplay between cavity nucleation and lattice strain. 4,6 Nanocrack evolves thermally via Ostwald ripening 7 and subcritical crack propagation 8 and the complete overlayer separation is achieved when cracks coalescence sweeps the whole substrate.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies

Reboh

Schaurich

Declémy

et al. 2010

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Mechanism of the Smart Cut™ layer transfer in silicon by hydrogen and helium coimplantation in the medium dose range J. Appl. Phys. 97, 083527 (2005) We report on the microstructure of silicon coimplanted with hydrogen and helium ions at moderate energies. X-ray diffraction investigations in as-implanted samples show the direct correlation between the lattice strain and implanted ion depth profiles. The measured strain is examined in the framework of solid mechanics and its physical origin is discussed. The microstructure evolution of the samples subjected to intermediate temperature annealing ͑350°C͒ is elucidated through transmission electron microscopy. Gas-filled cavities in the form of nanocracks and spherical bubbles appear at different relative concentration, size, and depth location, depending on the total fluence. These different microstructure evolutions are connected with the surface exfoliation behavior of samples annealed at high temperature ͑700°C͒, determining the optimal conditions for thick layer transfer. 1.5 m thick Si films are then obtained onto glass substrates.

show abstract

Section: ͑2͒mentioning

confidence: 99%

Section: 2mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies

Reboh

Schaurich

Declémy

et al. 2010

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…More recently it has also been experimentally demonstrated that the introduction of H into specific pennyshaped He-based defects can lead to the propagation and interaction of cracks under particular conditions of annealing, giving rise to the splitting of films. 9 These He-filled two dimensional defects acting as precursors of cracks are referred to as He-plates; they are similar to Hplatelets regarding their shape but 10 times larger. 9,10 The processes of exfoliation/blistering are however similar: the high internal pressure of He-plates associated with the embrittlement effect of H cause the coalescence of these nano-sized defects and then the propagation of microcracks in the material.…”

Section: Introductionmentioning

confidence: 99%

“…9 These He-filled two dimensional defects acting as precursors of cracks are referred to as He-plates; they are similar to Hplatelets regarding their shape but 10 times larger. 9,10 The processes of exfoliation/blistering are however similar: the high internal pressure of He-plates associated with the embrittlement effect of H cause the coalescence of these nano-sized defects and then the propagation of microcracks in the material. 6,11,12 Very little works have been reported on the crack propagation during thermal annealing, even on the most-studied area of H-platelets in the Smart-Cut process.…”

Section: Introductionmentioning

confidence: 99%

In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply

Vallet

Barbot

Oliviero

et al. 2014

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

In this work, ion implantations with in situ transmission electron microscopy observations followed by different rates of temperature ramp were performed in (001)-Si to follow the evolution of He-plates under the influence of hydrogen. The JANNUS and MIAMI facilities were used to study the first stages of growth as well as the interactions between co-planar plates. Results showed that under a limited amount of H, the growth of He-plates resulting from a subcritical stress-corrosion mechanism can be fully described by the kinetic model of Johnson-Mehl-Avrami-Kolmogorov with effective activation energy of 0.9 eV. Elastic calculations showed that the sudden and non-isotropic coalescence of close He-plates occurs when the out-of-plane tensile stress between them is close to the yield strength of silicon.After hydrogen absorption, surface minimization of final structure occurs.2

show abstract

Observation of Large Surface Area Exfoliation in Hydrogen Implanted Ge

Pathak

Dadwal

Kapoor

et al. 2020

Physica Status Solidi (a)

View full text Add to dashboard Cite

Large surface area exfoliation of the hydrogen (H)‐implanted Ge is investigated in this work. H+ ions with a fluence of 1 × 1017 cm−2 are implanted in Ge samples at liquid nitrogen and room temperature (RT). The formation of surface blisters and craters is observed in the samples annealed between 300 and 450 °C after implantation. Interestingly, samples implanted at RT show large surface area exfoliation extending over several hundreds of micrometer region after annealing. Secondary ion mass spectroscopy (SIMS) and depth‐resolved Raman spectroscopy are used to characterize the depth profile of implanted H+ ions and stress in the damage region, respectively. The formation of the damage band filled with extended planar defects in the form of nanocracks is observed using a cross‐sectional transmission electron microscope (TEM). The physical understanding of the H‐induced internal pressure and stress in the surface blisters/craters is carried out using Föppl–von Karman theory of thin plates.

show abstract

H-induced subcritical crack propagation and interaction phenomena in (001) Si using He-cracks templates

Cited by 20 publications

References 14 publications

On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies

On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies

In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply

Observation of Large Surface Area Exfoliation in Hydrogen Implanted Ge

Contact Info

Product

Resources

About