We present a study of phase escape in surface Bi 2 Sr 2 CaCu 2 O 8+δ intrinsic Josephson junctions in the presence of microwave radiation. The measured switching current distributions display clear double-peak structures in the microwave field, which result from the single-and two-photon resonant escape processes accompanied by microwave-induced potential barrier suppression. We show that these results can be well explained by a quantummechanical model proposed by Fistul et al (2003 Phys. Rev . B 68 060504), from which the power and frequency dependences of the switching current distributions can be reproduced.