Quantum Conductance Oscillations in Metal/Molecule/Metal Switches at Room Temperature

Miao, Feng; Ohlberg, Douglas A. A.; Stewart, Donald C.; Williams, R. Stanley; Lau, Chun Ning

doi:10.1103/physrevlett.101.016802

Cited by 16 publications

(10 citation statements)

References 23 publications

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“…1a. To perform in-situ piezoconductive measurements, we introduce pressure-modulated conductance microscopy (PCM) 25,26 , which utilizes a non-conducting atomic force microscopy (AFM) tip to apply adjustable local pressure on the top of the suspended graphene, yielding a topography image of the strained graphene. The conductance/resistance of the device is monitored simultaneously, and comparison of the conductance/resistance image and topography offers piezoconductive information of the suspended graphene membranes.…”

Section: Resultsmentioning

confidence: 99%

The positive piezoconductive effect in graphene

Wang

Zhao

et al. 2015

Nat Commun

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As the thinnest conductive and elastic material, graphene is expected to play a crucial role in post-Moore era. Besides applications on electronic devices, graphene has shown great potential for nano-electromechanical systems. While interlayer interactions play a key role in modifying the electronic structures of layered materials, no attention has been given to their impact on electromechanical properties. Here we report the positive piezoconductive effect observed in suspended bi- and multi-layer graphene. The effect is highly layer number dependent and shows the most pronounced response for tri-layer graphene. The effect, and its dependence on the layer number, can be understood as resulting from the strain-induced competition between interlayer coupling and intralayer transport, as confirmed by the numerical calculations based on the non-equilibrium Green's function method. Our results enrich the understanding of graphene and point to layer number as a powerful tool for tuning the electromechanical properties of graphene for future applications.

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Section: Resultsmentioning

confidence: 99%

The positive piezoconductive effect in graphene

Wang

Zhao

et al. 2015

Nat Commun

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“…We have shown in this tutorial that many phenomenathe change in the discharge rate of a capacitor when the ± plates are switched or change in the current in a circuit when the battery terminals are swapped -are attributable to a memristive component in the circuit. 14,15 In such cases, a real-world circuit can only be mapped on to one of the ideal circuits with memristors.…”

Section: Discussionmentioning

confidence: 99%

The elusive memristor: properties of basic electrical circuits

2009

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We present a tutorial on the properties of the new ideal circuit element, a memristor. By definition, a memristor M relates the charge q and the magnetic flux φ in a circuit, and complements a resistor R, a capacitor C, and an inductor L as an ingredient of ideal electrical circuits. The properties of these three elements and their circuits are a part of the standard curricula. The existence of the memristor as the fourth ideal circuit element was predicted in 1971 based on symmetry arguments, but was clearly experimentally demonstrated just this year. We present the properties of a single memristor, memristors in series and parallel, as well as ideal memristorcapacitor (MC), memristor-inductor (ML), and memristor-capacitor-inductor (MCL) circuits. We find that the memristor has hysteretic current-voltage characteristics. We show that the ideal MC (ML) circuit undergoes non-exponential charge (current) decay with two time-scales, and that by switching the polarity of the capacitor, an ideal MCL circuit can be tuned from overdamped to underdamped. We present simple models which show that these unusual properties are closely related to the memristor's internal dynamics. This tutorial complements the pedagogy of ideal circuit elements (R, C, and L) and the properties of their circuits.

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“…The electronic transport is fundamentally different, which is expected since electroforming is a traumatic experience that results in the formation of ͑usually͒ a single dominant nanoscale conducting channel, even on a large area device. [23][24][25][26][27][28] Here, we use our transport results to refine this general picture.…”

Section: A Electrical Transportmentioning

confidence: 91%

Electrical transport and thermometry of electroformed titanium dioxide memristive switches

Borghetti¹,

Strukov²,

Pickett³

et al. 2009

Journal of Applied Physics

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We investigated the electrical transport of electroformed titanium dioxide memristive switches from liquid helium to room temperatures in order to better understand their internal states. After electroforming, we observed a continuous transition between two distinct limiting behaviors: a nearly Ohmic "ON"-state and an "OFF"-state characterized by conduction through a barrier. We interpret our data in terms of a model in which the electroforming step creates a conducting channel that does not completely bridge the metal contacts on the titanium dioxide film. The switching then occurs as a result of voltage-induced changes in the oxygen vacancy concentration in the gap between the tip of the channel and the adjacent metal contact. We used the metallic resistivity of the conduction channel as an in situ thermometer to measure the local device temperature, thus revealing an important implicit state variable.

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Quantum Conductance Oscillations in Metal/Molecule/Metal Switches at Room Temperature

Cited by 16 publications

References 23 publications

The positive piezoconductive effect in graphene

The positive piezoconductive effect in graphene

The elusive memristor: properties of basic electrical circuits

Electrical transport and thermometry of electroformed titanium dioxide memristive switches

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