Quantum confinement effects in CdTe nanostructured films prepared by the RF sputtering technique

In order to provide a quantitatively accurate description of the band gap variation with sizes in various II-VI semiconductor nanocrystals, we make use of the recently reported tight-binding parametrization of the corresponding bulk systems. Using the same tight-binding scheme and parameters, we calculate the electronic structure of II-VI nanocrystals in real space with sizes ranging between 5 and 80Å in diameter. A comparison with available experimental results from the literature shows an excellent agreement over the entire range of sizes.

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“…[62]. The solid line passing through the calculated filled circles is the best fit to the calculated points obtained using Eq.…”

Section: Resultsmentioning

confidence: 98%

Evolution of the electronic structure with size in II-VI semiconductor nanocrystals

2004

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“…2. Broadness of the XRD peak indicates that the size of the crystallites is very small (Arizpe-Chavez 2000). Since the thickness of each sublayer and the size of the crystallites are in the order of few nanometers, the XRD spectra have small spike-like structures throughout the range.…”

Section: Resultsmentioning

confidence: 99%

Structural and optical properties of CdTe/CdSe heterostructure multilayer thin films prepared by physical vapor deposition technique

Kumar

Devadason

2012

Appl Nanosci

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CdTe/CdSe heterostructure multilayer thin films and single layers of CdSe and CdTe thin films were prepared. Sequential thermal evaporation technique is made possible to adjust the layer thickness precisely. XRD studies were used to calculate average size of the crystallites and confirmed the (111) and (100) planes of CdTe and CdSe, respectively. Bulk CdTe has band gap energy of 1.54 eV that can be shifted to larger values by reducing the crystallite size to dimensions smaller than the Bohr radius of the exciton. Experimentally measured energy levels show the spin-orbit split of valance band of CdTe. Crystallite sizes (7-12 nm) were calculated with the predictions of effective mass approximation model (i.e., Brus model) which shows that the diameter of crystallites were much smaller than the Bohr exciton diameter (14 nm) of CdTe. It is found that the emission peaks of the prepared CdTe/ CdSe ML samples were shifted from the peaks of CdSe and CdTe single layers toward red region as a characteristic of type II band alignment.

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“…The cubic phase has also been reported in oxidized CdTe surfaces [18,4,7,19]. The crystalline structure has been totally determined for only one monoclinic phase [16].…”

Section: Structural and Electronic Propertiesmentioning

confidence: 90%

Electronic structure of binary and ternary components of CdTe:O thin films

Menéndez-Proupín

Gutiérrez

Palmero

et al. 2004

phys. stat. sol. (c)

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We report first-principles calculations of the electronic structure of the simplest compounds that may be present in Cd-Te-O mixtures: CdTe, CdO, a-TeO 2 , CdTeO 3 and Cd 3 TeO 6 . The calculations are carried out in the Local Density Approximation (LDA) and predict the insulating character of these compounds, underestimating the optical bandgaps by nearly 1 eV, as usual for LDA. In the four oxides, the top valence bands originate mainly from the O 2p atomic levels.

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Quantum confinement effects in CdTe nanostructured films prepared by the RF sputtering technique

Cited by 39 publications

References 24 publications

Evolution of the electronic structure with size in II-VI semiconductor nanocrystals

Evolution of the electronic structure with size in II-VI semiconductor nanocrystals

Structural and optical properties of CdTe/CdSe heterostructure multilayer thin films prepared by physical vapor deposition technique

Electronic structure of binary and ternary components of CdTe:O thin films

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