Quantum confinement effects in GeSn/SiGeSn heterostructure lasers

Stange, Daniela; Driesch, Nils von den; Rainko, Denis; Zabel, T.; Marzban, Bahareh; Ikonić, Z.; Zaumseil, P.; Capellini, Giovanni; Manti, S.; Witzens, Jeremy; Sigg, H.; Grützmacher, Detlev; Buca, D.

doi:10.1109/iedm.2017.8268451

Cited by 3 publications

(4 citation statements)

References 6 publications

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“…This would have a harmful impact on laser performances. Significantly lower thresholds (45 kW/cm 2 at 20 K) were recently obtained in micro-disks with GeSn 13.0% multi quantum wells (MQW) [18]. This might be a path forward for a future optimization of GeSn 16.0% micro-disk performances.…”

Section: Optical Characterization Resultsmentioning

confidence: 85%

“…In Germanium (Ge), despite its indirect bandgap, the energy splitting between the Γ and L valleys is small, only 140 meV. The Γ valley can become lower in energy than the L valley, by applying an uniaxial or biaxial tensile strain in the Ge layer [8][9][10][11][12], or by alloying Ge with Sn [13][14][15][16][17][18]. The latter approach has gained ground since the demonstration in 2015 of optically pumped lasing in a GeSn Fabry-Pérot optical cavity [13].…”

Section: Introductionmentioning

confidence: 99%

“…The latter approach has gained ground since the demonstration in 2015 of optically pumped lasing in a GeSn Fabry-Pérot optical cavity [13]. Follow-up studies confirmed the robustness of GeSn as a gain material and improved the performance of GeSn lasers thanks to higher Sn concentrations in the optically active layers and the use of electronic potential barriers, made of lower Sn concentration GeSn alloys or SiGeSn ternary alloys, to improve carrier confinement [14][15][16][17][18]. Best performances to date are 45 kW/cm 2 for the lasing threshold of a GeSn 13.0%/SiGeSn heterostructure micro-disk cavity [18] and a maximum lasing temperature of 180 K for GeSn lasing cavities with Sn concentrations up to 16.0% -17.5% [16,17].…”

Section: Introductionmentioning

confidence: 99%

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GeSn heterostructure micro-disk laser operating at 230 K

Thai¹,

Pauc²,

Aubin³

et al. 2018

Opt. Express

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We demonstrate lasing up to 230 K in a GeSn heterostructure micro-disk cavity. The GeSn 16.0% optically active layer was grown on a step-graded GeSn buffer, limiting the density of misfit dislocations. The lasing wavelengths shifted from 2720 to 2890 nm at 15 K up to 3200 nm at 230 K. Compared to results reported elsewhere, we attribute the increase in maximal lasing temperature to two factors: a stronger optical confinement by a thicker active layer and a better carrier confinement provided by a GeSn 13.8% / GeSn 16.0% / GeSn 13.8% double heterostructure.

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Section: Optical Characterization Resultsmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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GeSn heterostructure micro-disk laser operating at 230 K

Thai¹,

Pauc²,

Aubin³

et al. 2018

Opt. Express

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“…Effective mass is not the absolute mass of the carrier, but rather the mass it exhibits while it interacts with other carriers and the crystal lattice of the medium it is travelling through. If the effective mass of an electron is reduced in a section of our device, then naturally, the electron will display higher velocity and higher mobility for the same amount of energy [3][4][5]. A composite channel HEMT at its core, exploits this effect to increase carrier velocity within the channel, resulting in higher carrier speeds and improved device performance.…”

Section: Introductionmentioning

confidence: 99%

Composite channel 100 nm InP HEMT with ultrathin barrier for millimetre wave applications

Nandi,

Dubey,

Kumar

et al. 2024

Eng. Res. Express

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This work proposes a new 100 nm InP based InGaAs-InAs-InGaAs composite channel HEMT for millimetre wave applications. The usage of an ultra-thin 2 nm barrier layer, unique composite channel topology and III-V material selection provides superior electron confinement in the channel, enhancing 2DEG concentration and hence, mobility and speed of the proposed device. We achieve a unity current gain frequency (fT) of 248.9 GHz and a maximum oscillation frequency (fMAX) of 523.9 GHz with a current gain of 67.7 dB at 0.1 GHz. Off-state leakage current is in the nanoampere range with minimum noise figure (NFMIN) of only 0.76 dB at 10 GHz. We compare the DC and RF performance and the associated parasitics of different composite channel HEMTs proposed in latest works and mathematically justify why InGaAs-InAs-InGaAs channel HEMTs provide the highest fTand fMAX. InGaAs-InAs-InGaAs channel HEMTs provide 1.4 times better fTand fMAX with only half the NFMINof their InGaAs-InP-InGaAs channel counterparts. A frequency dependent intrinsic FET model is put forward for the proposed HEMT which allows us to model the behavior of the device under varying RF conditions and identify the effect of individual parameters on the entire system.

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Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

Rainko

Ikonić

Vukmirović

et al. 2018

Sci Rep

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Since the first demonstration of lasing in direct bandgap GeSn semiconductors, the research efforts for the realization of electrically pumped group IV lasers monolithically integrated on Si have significantly intensified. This led to epitaxial studies of GeSn/SiGeSn hetero- and nanostructures, where charge carrier confinement strongly improves the radiative emission properties. Based on recent experimental literature data, in this report we discuss the advantages of GeSn/SiGeSn multi quantum well and quantum dot structures, aiming to propose a roadmap for group IV epitaxy. Calculations based on 8-band k∙p and effective mass method have been performed to determine band discontinuities, the energy difference between Γ- and L-valley conduction band edges, and optical properties such as material gain and optical cross section. The effects of these parameters are systematically analyzed for an experimentally achievable range of Sn (10 to 20 at.%) and Si (1 to 10 at.%) contents, as well as strain values (−1 to 1%). We show that charge carriers can be efficiently confined in the active region of optical devices for experimentally acceptable Sn contents in both multi quantum well and quantum dot configurations.

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Quantum confinement effects in GeSn/SiGeSn heterostructure lasers

Cited by 3 publications

References 6 publications

GeSn heterostructure micro-disk laser operating at 230 K

GeSn heterostructure micro-disk laser operating at 230 K

Composite channel 100 nm InP HEMT with ultrathin barrier for millimetre wave applications

Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

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