Quantum confinement effects on electron spin g‐factor in semiconductor quantum well structures

Abstract

The effects of quantum confinement on electron spin g-factor have been investigated in lattice-matched GaAs/AlGaAs quantum wells (QWs) and strained InGaAs/GaAs QWs. We demonstrate how the spin precession frequency changes depending on the GaAs well width and the indium fraction in In x Ga 1-x As well by time-resolved photoluminescence measurements under a high magnetic field. The g-factor values obtained by the spin precession measurements are compared with precise calculation method proposed by Ivchenko. The calculated results agree with our experimental results in lattice matched QWs. In addition to this calculation, we have examined a simplified k·p perturbation calculation. It is found that the k·p calculation exhibits good agreement with the experimental trends both in the unstrained and strained QW systems.

Hole spin injection from a GaMnAs layer into GaAs–AlAs–InGaAs resonant tunneling diodes

“…The observation of different signs for the polarization degree of GaAs and InGaAs QWs is consistent with the opposite signs of carrier g-factors of GaAs and InGaAs QW [14]. We also point out that for sample S1 the higher energy band from the GaAs QW EL (-emission) shows a higher EL intensity.…”

Electron spin precession observed in bulk CdTe at room temperature

“…We compare the experimental results with theoretical ones obtained by 3-band k·p perturbation theory [7,9], and discuss the physical origin of the temperature dependence of electron g-factor.…”

“…To clarify quantum confinement effects on the electron spin g-factor in AlGaAs/GaAs and CdTe/CdMgTe quantum wells (QWs), many experimental and theoretical studies were performed at low temperature [3,4,7,8]. From an application viewpoint, it is necessary to clarify the spin properties not only at low temperature but also at room temperature.…”

“…However, the accuracy of the theoretical analyses is known to be not enough in high temperature region. Here, we adopt the 3-band k·p theory [7,9], which include Γ 6 conduction band and Γ 8 and Γ 7 valence bands to calculate the electron g-factor, to estimate the total effects of the remote bands other than the 3 bands.…”

Dependence of electron spin g-factor on magnetic field in quantum wells

“…Electron Lande´g-factor which represents spin-magnetic field interaction has been studied in semiconductor structures [1][2][3][4][5][6][7]. The electron g-factor in quantum wells (QWs) exhibits anisotropy, reflecting symmetry of the quantum confinement [2][3][4][5][6][7][8][9].…”