Quantum correction to the equation of state of an electron gas in a semiconductor

Ancona, M. G.; Iafrate, G. J.

doi:10.1103/physrevb.39.9536

Cited by 453 publications

(249 citation statements)

References 8 publications

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“…The Classical Drift-Diffusion system corrected with the Bohm potential has already been used in the physics or mathematics literature [2], [3], [18], [64], [65]. Our approach provides another derivation of this model.…”

Section: Statement Of the Resultsmentioning

confidence: 99%

“…In the case of the Drift-Diffusion model, this correction is shown to involve the socalled Bohm potential, which occurs in many quantum hydrodynamics [42], [41], [46] and quantum drift-diffusion [2], [3] theories. Consequently, this paper gives a way to derive this Quantum Drift-Diffusion model from first principles.…”

Section: Introductionmentioning

confidence: 99%

“…However, this approach is seldom used (see however a quantum version of the Drift-Diffusion model in [2], [3]), because it is extremely difficult to perform the derivation of Drift-Diffusion models from the kinetic level in a quantum setting. Indeed, this would require a quantum theory of collisions.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Quantum Energy-Transport and Drift-Diffusion Models

2005

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We show that Quantum Energy-Transport and Quantum Drift-Diffusion models can be derived through diffusion limits of a collisional Wigner equation. The collision operator relaxes to an equilibrium defined through the entropy minimization principle. Both models are shown to be entropic and exhibit fluxes which are related with the state variables through spatially non-local relations. Thanks to an expansion of these models, 2 perturbations of the Classical Energy-Transport and Drift-Diffusion models are found. In the DriftDiffusion case, the quantum correction is the Bohm potential and the model is still entropic. In the Energy-Transport case however, the quantum correction is a rather complex expression and the model cannot be proven entropic.

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Section: Statement Of the Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Quantum Energy-Transport and Drift-Diffusion Models

2005

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“…where a microscopic expression of the macroscopic factor b n has been derived in [30] which reads b n = 2 /(12qm * n ), φ n is the generalized quasi-Fermi potential, and all other symbols have the conventional meaning. The right-hand side of (1) represents the Boltzmann statistics for electrons and the left-hand side can be interpreted as a quantum mechanical correction to the Boltzmann statistics.…”

Section: Simulation Approachmentioning

confidence: 99%

Statistical 3D ‘atomistic’ simulation of decanano MOSFETs

Asenov

Slavcheva

Brown

et al. 2000

Superlattices and Microstructures

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A 3D statistical 'atomistic' simulation technique has been developed to study the effect of the random dopant induced parameter fluctuations in aggressively scaled MOSFETs. Efficient implementation of the 'atomistic' simulation approach has been used to investigate the threshold voltage standard deviation and lowering in the case of uniformly doped MOSFETs, and in fluctuation-resistant architectures utilising epitaxial-layers and delta-doping. The effect of the random doping in the polysilicon gate on the threshold voltage fluctuations has also been thoroughly investigated. The influence of a single-charge trapping on the channel conductivity in decanano MOSFETs is studied in the 'atomistic' framework as well. Quantum effects are taken into consideration in our 'atomistic' simulations using the density gradient formalism.

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“…The doping concentrations of the drain, source, and polygate are 5x10 19 cm -3 , the oxide thickness is 1.8 nm, the doping concentration in the substrate is constant and equal to 5x10 18 cm -3 , and the diffusion of the drain and source junctions under the gate are 2 nm. Quantum mechanical effects were taken into account in this analysis by the Density-Gradient model [8]. …”

Section: Numerical Resultsmentioning

confidence: 99%

RDF Analysis of Small-Signal Equivalent Circuit Parameters in MOSFET Devices

Oniciuc

Andrei

Simulation of Semiconductor Processes and Devices 2007

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A perturbation technique is developed for the analysis of random doping induced fluctuations (RDF) of small-signal equivalent circuit parameters in semiconductor devices. This technique is based on the computation of the doping sensitivity functions of parameters of interest by using the admittance matrix parameters and is applied to the study of RDF of equivalent circuit parameters in a 40-nm channel length MOSFET. The presented technique can be easily extended to the analysis of RDF in other semiconductor devices such as SOI, HEMT, etc.

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Quantum correction to the equation of state of an electron gas in a semiconductor

Cited by 453 publications

References 8 publications

Quantum Energy-Transport and Drift-Diffusion Models

Quantum Energy-Transport and Drift-Diffusion Models

Statistical 3D ‘atomistic’ simulation of decanano MOSFETs

RDF Analysis of Small-Signal Equivalent Circuit Parameters in MOSFET Devices

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