Statistical 3D ‘atomistic’ simulation of decanano MOSFETs

Asenov, A.; Slavcheva, G; Brown, Andrew R.; Balasubramaniam, R.; Davies, John H.

doi:10.1006/spmi.1999.0805

Cited by 5 publications

(3 citation statements)

References 26 publications

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“…This approach has been extended to the extreme ''atomistic'' regime, where most meshes contain no dopant or, at most, one dopant. [5][6][7][8] Indeed, this is the situation actually taken place in real sub-100 nm MOSFETs.…”

Section: Nobuyuki Sano A) and Masaaki Tomizawa B)mentioning

confidence: 99%

Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors

Sano

Tomizawa

2001

Applied Physics Letters

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Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxidesemiconductor field-effect-transistors J. Appl. Phys. 95, 7954 (2004); 10.1063/1.1699496 Drift-diffusion equation for ballistic transport in nanoscale metal-oxide-semiconductor field effect transistors J. Appl. Phys. 92, 5196 (2002); 10.1063/1.1509098Three-dimensional simulations of ultrasmall metal-oxide-semiconductor field-effect transistors: The role of the discrete impurities on the device terminal characteristics Modeling of gate-induced drain leakage current in n-type metal-oxide-semiconductor field effect transistor

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Section: Nobuyuki Sano A) and Masaaki Tomizawa B)mentioning

confidence: 99%

Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors

Sano

Tomizawa

2001

Applied Physics Letters

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“…These effects, predicted twenty years ago, 1,2 have been confirmed in several experiments [3][4][5] and simulations. [6][7][8][9][10] The fluctuations will have significant impact on the functionality, yield, and reliability of the corresponding systems.…”

Section: Introductionmentioning

confidence: 99%

Potential fluctuations in metal–oxide–semiconductor field-effect transistors generated by random impurities in the depletion layer

Slavcheva

Davies

Brown

et al. 2002

Journal of Applied Physics

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We have studied the magnitude and length scale of potential fluctuations in the channel of metaloxide-semiconductor field-effect transistors due to the random positions of ionized impurities in the depletion layer. These fluctuations effect the threshold voltage of deep submicron devices, impede their integration, and reduce yield and reliability. Our simple, analytic results complement numerical, atomistic simulations. The calculations are based on a model introduced by Brews to study fluctuations due to charges in the oxide. We find a typical standard deviation of 70 mV in the potential below threshold, where the channel is empty, falling to 40 mV above threshold due to screening by carriers in the channel. These figures can be reduced by a lightly doped epitaxial layer of a few nm thickness. The correlation function decays exponentially in an empty channel with a length scale of 9 nm, which screening by carriers reduces to about 5 nm. These calculations of the random potential provide a guide to fluctuations of the threshold voltage between devices because the length of the critical region in a well-scaled transistor near threshold is comparable to the correlation length of the fluctuations. The results agree reasonably well with atomistic simulations but detailed comparison is difficult because half of the total standard deviation comes from impurities within 1 nm of the silicon-oxide interface, which is a single layer of the grid used in the simulations.

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“…In this short paper, a compact method for transient signal analysis has been applied to a Monte Carlo simulation of electron transport in a plausible 0.1 µm scale vertical n-MOSFET, with the aim of comparing the device speed with that of a similar dimension planar n-MOSFET. The feature size of these two structures is at the limit of what can be reasonably modelled using conventional Monte Carlo simulation; modelling of smaller 'decanano' devices has lately been reported that takes full account of quantum and additional effects such as the exact local distribution of impurities [8][9][10]. The device geometries and transport model are described in section 2, and details of the frequency analysis and results obtained are presented in section 3.…”

Section: Introductionmentioning

confidence: 99%

The transient signal response of submicron vertical silicon field effect transistors

Crow¹,

Abram²

2001

Semicond. Sci. Technol.

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A Monte Carlo simulation has been used to model steady state and transient electron transport in a vertical geometry n-type silicon metal-oxide field effect transistor (Si n-MOSFET). Detailed time-dependent voltage signal analysis has been carried out to demonstrate the modulation response of the device, which has been compared with the result of an identical analysis performed on a more conventional planar geometry silicon-on-insulator n-MOSFET of similar dimensions and doping. The effective source-drain separation of the modelled devices is 90 nm, while the polysilicon gate length and channel width are 50 nm. The calculations suggest that provided the contact resistance and capacitance associated with the drain of similar experimental structures can be limited, the upper limit to the current gain cut-off frequency of this vertical MOSFET is 160 ± 10 GHz, a 50% improvement over the planar device.

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Statistical 3D ‘atomistic’ simulation of decanano MOSFETs

Cited by 5 publications

References 26 publications

Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors

Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors

Potential fluctuations in metal–oxide–semiconductor field-effect transistors generated by random impurities in the depletion layer

The transient signal response of submicron vertical silicon field effect transistors

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