simulations of high-speed InSb-InAlSb FETs.', IEEE transactions on electron devices., 52 (6). pp. 1072-1078. Further information on publisher's website:http://dx.doi.org/10.1109/TED. 2005.848115 Publisher's copyright statement:Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details.

Self-consistent Monte Carlo simulations are reported for AlGaN/GaN HFETs. Hot-carrier scattering rates are determined by fitting experimental ionization coefficients and the doping character of the GaN is obtained from substrate bias measurements. Preliminary simulations for a simple model of the AlGaN surface are described and results are found to be consistent with experimental data. The high-frequency response of short-gate-length transistors is found to be sensitive to the charge state of the free AlGaN surface and it is proposed that current-slump phenomena may also be related to deep levels at this surface. Breakdown calculations show interesting two-dimensional effects close to the drain contact.

The purpose of this paper is to simulate capture events into quantum well structures of the kinds studied in luminescence experiments in order to understand the carrier dynamics, to extract local electron and hole capture times and to relate microscopic carrier processes to the luminescence signal. To do this, a quantum mechanical model for charge capture by a quantum well has been incorporated into a self-consistent Monte Carlo simulation of carrier transport in quantum well laser diodes. The capture model makes use of the established technique of modifying Fermi's golden rule to calculate a dimensionless capture probability instead of a capture rate. This model has been used to simulate time-resolved photoluminescence experiments on a variety of InGaAsP-based structures which have unstrained In 0.53 Ga 0.47 As quantum wells. Local electron and hole capture times have been extracted from the transport data for simulations performed at 300 K, and these times oscillate as a function of well width. Wells 85-90 Å wide permit fast electron capture into a second electronic subband (0.56 ps capture time) and hole capture into a second light hole band (0.44 ps). This may be contrasted with a 75 Å well for which electron capture into the single conduction subband exceeds 1.7 ps, and the peak hole capture time is 1.1 ps.

Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details.

No abstract