Monte Carlo simulations of carrier transport in AlGaInP laser diodes

Crow, G.C.; Abram, R. A.

doi:10.1109/3.622636

Cited by 6 publications

(5 citation statements)

References 20 publications

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“…9 To our knowledge, this is the first Monte Carlo device simulation of its kind for these inter-subband emitters, although Monte Carlo simulation has been used to model inter-band pump-probe spectroscopy of quantum wells and inter-band quantum well laser diodes. 10,11 While the results presented here are for asymmetric and triple-quantum-well designs, the general conclusions regarding subband heating and its effects, and the non-Fermi-Dirac nature of the electron distributions, should also hold for alternative designs.…”

Section: Introductionmentioning

confidence: 99%

Nonequilibrium electron heating in inter-subband terahertz lasers

Kinsler

Kelsall

Harrison

2002

Journal of Applied Physics

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Inter-subband laser performance can be critically dependent on the nature of the electron distributions in each subband. In these first Monte Carlo device simulations of optically pumped inter-subband THz lasers, we can see that there are two main causes of electron heating: intersubband decay processes, and inter-subband energy transfer from the ''hot'' nonequilibrium tails of lower subbands. These processes mean that devices relying on low electron temperatures are disrupted by electron heating, to the extent that slightly populated subbands can have average energies far in excess of the that of either the lattice or other subbands. However, although these heating effects invalidate designs relying on low temperature electron distributions, we see that population inversion is still possible in the high-THz range at 77 K in both stepped and triple-well structures, and that our 11.7 THz triple-well structure even promises inversion at 300 K.

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Section: Introductionmentioning

confidence: 99%

Nonequilibrium electron heating in inter-subband terahertz lasers

Kinsler

Kelsall

Harrison

2002

Journal of Applied Physics

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“…The model is based on an ensemble Monte Carlo simulation of carrier transport in laser diodes [15]. Self-consistency is provided by a finite difference solution of Poisson's equation [16].…”

Section: Simulation Detailsmentioning

confidence: 99%

“…The Monte Carlo particle method has recently been used to simulate different aspects of carrier dynamics in quantum well lasers since it can resolve details of transport and relaxation on short space (nanometres) and time (femtoseconds) scales. These include studies of the optical gain dynamics [8,9], electron relaxation within SCH and GRINSCH quantum well structures [10,11], mechanisms for quantum capture and escape [12][13][14] and the electrical modulation response [15]. The technique can be computationally intensive, since direct application of the Monte Carlo method to model a laser requires the particle ensemble to be drifted over many short (femtosecond) timesteps in order for the transport solution to be consistent with Poisson's equation.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo simulations of capture into quantum well structures

Crow

Abram

1999

Semicond. Sci. Technol.

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The purpose of this paper is to simulate capture events into quantum well structures of the kinds studied in luminescence experiments in order to understand the carrier dynamics, to extract local electron and hole capture times and to relate microscopic carrier processes to the luminescence signal. To do this, a quantum mechanical model for charge capture by a quantum well has been incorporated into a self-consistent Monte Carlo simulation of carrier transport in quantum well laser diodes. The capture model makes use of the established technique of modifying Fermi's golden rule to calculate a dimensionless capture probability instead of a capture rate. This model has been used to simulate time-resolved photoluminescence experiments on a variety of InGaAsP-based structures which have unstrained In 0.53 Ga 0.47 As quantum wells. Local electron and hole capture times have been extracted from the transport data for simulations performed at 300 K, and these times oscillate as a function of well width. Wells 85-90 Å wide permit fast electron capture into a second electronic subband (0.56 ps capture time) and hole capture into a second light hole band (0.44 ps). This may be contrasted with a 75 Å well for which electron capture into the single conduction subband exceeds 1.7 ps, and the peak hole capture time is 1.1 ps.

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“…In practice, the actual carrier dynamics is the result of simultaneous combination of all the processes. The complexity of the resultant dynamics limits its investigation to the numerical self-consistent calculation on a large equation set of related processes [14][15][16][17]. Moreover, unless the special treatment is implemented, the incorporation of these processes is incompatible with the conventional drift-diffusion model, which is widely used as a tool for the device output estimation and the design optimization.…”

Section: Introductionmentioning

confidence: 99%

Effective mobility for sequential carrier transport in multiple quantum well structures

et al. 2017

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We investigate a theoretical model for effective carrier mobility to comprehensively describe the behavior of the perpendicular carrier transport across multiple quantum well (MQW) structures under applied electric field. The analytical expressions of effective mobilities for thermionic emission, direct tunneling, and thermally-assisted tunneling are derived based on the quasi-thermal equilibrium approximation and the semi-classical approach. Effective electron and hole mobilities in InGaAs/GaAsPMQWs predicted from our model are in good agreement with the experimental results obtained from the carrier time-of-flight measurement near room temperature. With this concept, the complicated carrier dynamics inside MQWs can be simplified to an effective mobility, an equivalent parameter which is more straightforward to handle and can be easily incorporated in the conventional drift-diffusion model.

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Monte Carlo simulations of carrier transport in AlGaInP laser diodes

Cited by 6 publications

References 20 publications

Nonequilibrium electron heating in inter-subband terahertz lasers

Nonequilibrium electron heating in inter-subband terahertz lasers

Monte Carlo simulations of capture into quantum well structures

Effective mobility for sequential carrier transport in multiple quantum well structures

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