2014
DOI: 10.1109/ted.2013.2296209
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Quantum Corrections Based on the 2-D Schrödinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs

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Cited by 39 publications
(37 citation statements)
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“…In the MC simulator, the quantum corrections have been included via the solution of the DG equation for the In 0.53 Ga 0.47 As device [10], and of the 2-D Schrödinger equation for the Si device [17], respectively. The MC simulation tool uses an analytic non-parabolic anisotropic model [18] and includes the interface roughness via Ando's model [19].…”
Section: Finfet Modellingmentioning
confidence: 99%
See 1 more Smart Citation
“…In the MC simulator, the quantum corrections have been included via the solution of the DG equation for the In 0.53 Ga 0.47 As device [10], and of the 2-D Schrödinger equation for the Si device [17], respectively. The MC simulation tool uses an analytic non-parabolic anisotropic model [18] and includes the interface roughness via Ando's model [19].…”
Section: Finfet Modellingmentioning
confidence: 99%
“…Once accurately calibrated, the DG quantum corrections will mimic very well the position of the lowest bound state [27]. However, the FER will induce a shift in the ground state, particularly for low mass materials such as InGaAs, which would require small adjustments of DG fitting parameters for each simulated sample [17]. These adjustments, computationally prohibitive in variability studies, would introduce small changes in the carrier density distributions [28].…”
Section: A Fer and Mgw Variability Modelsmentioning
confidence: 99%
“…In conjunction with the three-dimensional Monte-Carlo (MC) and drift-diffusion (DD) simulation techniques [12,16], this paper draws on Poisson-Schrödinger (PS) quantum corrections [17,18]. See Figure 2 for the author's approach to simulation.…”
Section: Methodsmentioning
confidence: 99%
“…In this respect, we have not deepen on non-stationary transport [11,12] since here we are mainly focused on the thermal facet of the model (although velocity overshoot effects could have been incorporated in the electrical section of the model). Thus, the model we are proposing characterises the physics of thermal conduction within the device accurately, keeping at the same time a reasonable degree of simplicity, which is an essential feature from the compact modelling viewpoint.…”
Section: Introductionmentioning
confidence: 99%