Copies of full items can be used for personal research or study, educational, or not-for profit purposes without prior permission or charge. Provided that the authors, title and full bibliographic details are credited, a hyperlink and/or URL is given for the original metadata page and the content is not changed in any way.Publisher's statement: "© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting /republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works."
A note on versions:The version presented here may differ from the published version or, version of record, if you wish to cite this item you are advised to consult the publisher's version. Please see the 'permanent WRAP url' above for details on accessing the published version and note that access may require a subscription. Abstract-The fin edge roughness (FER) and the TiN metal grain work-function (MGW) induced variability affecting off and on device characteristics is studied and compared between a 10.4 nm gate length In 0.53 Ga 0.47 As FinFET and a 10.7 nm gate length Si FinFET. We have analysed the impact of variability by assessing five figures of merit (V T , SS, I OFF , DIBL and I ON ) using two state-of-the-art in-house-build 3-D simulation tools based on the finite element method. Quantum-corrected 3-D drift-diffusion simulations are employed for variability studies in the sub-threshold region while, in the on-region, we use quantum-corrected 3-D ensemble Monte Carlo simulations. The In 0.53 Ga 0.47 As FinFET is more resilient to the FER and MGW variability in the sub-threshold compared to the Si FinFET due to a stronger quantum carrier confinement present in the In 0.53 Ga 0.47 As channel. However, the on-current variability is between 1.1-2.2 times larger for the In 0.53 Ga 0.47 As FinFET than for the Si counterpart, respectively.