Quantum dot arrays in silicon and germanium

Lawrie, William I. L.; Eenink, H. G. J.; Hendrickx, Nico W.; Boter, Jelmer; Petit, Luca; Amitonov, Sergey V.; Lodari, Mario; Wuetz, Brian Paquelet; Volk, Christian; Philips, Stephan G. J.; Droulers, G.; Kalhor, Nima; Riggelen, F. van; Brousse, Delphine; Sammak, Amir; Vandersypen, L. M. K.; Scappucci, Giordano; Veldhorst, Menno

doi:10.1063/5.0002013

Cited by 132 publications

(110 citation statements)

References 72 publications

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“…However, these demonstrations were achieved in GaAs heterostructures where the hyperfine interaction limits the coherence time to a few tens of nanoseconds. To create functional quantum-dot arrays on a more-scalable platform, such as silicon quantum dots [15][16][17][18], the same level of control and addressability needs to be achieved.…”

Section: Introductionmentioning

confidence: 99%

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Charge Detection in an Array of CMOS Quantum Dots

et al. 2020

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The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward a large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenges lies in the detection of charges within the array. It is a prerequisite to initialize a desired charge state and read out spins through spin-to-charge conversion mechanisms. In this work, we use two methods based on either a single-lead charge detector or a reprogrammable single-electron transistor. By these methods, we study the charge dynamics and sensitivity by performing single-shot detection of the charge. Finally, we can probe the charge stability at any node of a linear array and assess the Coulomb disorder in the structure. We find an electrochemical potential fluctuation induced by charge noise comparable to that reported in other silicon quantum dots.

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Section: Introductionmentioning

confidence: 99%

“…We can envision using this SLQD as a readout site in quantum protocols using spin shuttling at one end of the array for qubit readout [20,21] or in three-dimensional structures [22,23]. The second method relies on a reconfigurable SET [17]. For this purpose, one can use any of the QDs of the upper or lower linear array.…”

Section: Introductionmentioning

confidence: 99%

Charge Detection in an Array of CMOS Quantum Dots

et al. 2020

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“…It should be noted that most of research on effects of noise on Landau-Zener problem was focused on transverse noise [41,42] having white [41] or Lorentzian spectrum [42], with longitudinal noise achieving much less attention [42], and the case of 1/f β spectrum (highly relevant for charge noise in nanostructures used in solid state quantum information processing [43,44]) even less. We focus our attention here mostly on silicon-based quantum dots (as coherence times in Si are longer than in GaAs, and silicon architectures have better prospects for scalability [45], once it becomes possible to create spin qubits with industrial Si technology), but the presented theory is applicable also to GaAs-based spin qubits. We stress that we focus on transfer errors induced by charge noise, with less attention devoted to other sources of transfer imperfection.…”

Section: Introductionmentioning

confidence: 99%

Adiabatic electron charge transfer between two quantum dots in presence of 1/f noise

Krzywda

Cywiński

2020

Phys. Rev. B

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Controlled adiabatic transfer of a single electron through a chain of quantum dots has been recently achieved in GaAs and Si/SiGe based quantum dots, opening prospects for turning stationary spin qubits into mobile ones, and solving in this way the problem of long-distance communication between quantum registers in a scalable quantum computing architecture based on quantum dots. We consider theoretically the process of such an electron transfer between two tunnel-coupled quantum dots, focusing on control by slowly varying the detuning of energy levels in the dots. We take into account the fluctuations in detuning caused by 1/f -type noise that is ubiquitous in semiconductor nanostructures, and analyze their influence on probability of successful transfer of an electron in a spin eigenstate. With numerical and analytical calculations we show that probability of electron not being transferred due to 1/f β noise in detuning is ∝ σ 2 t β−1 /v, where σ characterizes the noise amplitude, t is the interdot tunnel coupling, and v is the detuning sweep rate. Interestingly, this means that the noise-induced errors in charge transfer are independent of t for 1/f noise. For realistic parameters taken from experiments on silicon-based quantum dots, we obtain the minimal probability of charge transfer failure between a pair of dots is limited by 1/f noise in detuning to be the on order of 0.01. This means that in order to reliably transfer charges across many quantum dots, charge noise in the devices should be further suppressed, or tunnel couplings should be increased, in order to allow for faster transfer (and less exposure to noise), while not triggering the deterministic Landau-Zener excitation. arXiv:1909.11780v2 [cond-mat.mes-hall]

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“…roup-IV semiconductor spin qubits 1 are promising candidates to form the main building block of a quantum computer owing to their high potential for scalability towards large 2D-arrays [2][3][4][5] and the abundance of net-zero nuclear spin isotopes for long quantum coherence 6,7 . Over the past decade, all prerequisites for quantum computation were demonstrated on electron spin qubits in silicon, such as singleshot readout of a single electron 8 , high-fidelity single-qubit gates 9,10 and the operation of a two-qubit gate [11][12][13][14] .…”

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confidence: 99%

A single-hole spin qubit

et al. 2020

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Qubits based on quantum dots have excellent prospects for scalable quantum technology due to their compatibility with standard semiconductor manufacturing. While early research focused on the simpler electron system, recent demonstrations using multi-hole quantum dots illustrated the favourable properties holes can offer for fast and scalable quantum control. Here, we establish a single-hole spin qubit in germanium and demonstrate the integration of single-shot readout and quantum control. We deplete a planar germanium double quantum dot to the last hole, confirmed by radio-frequency reflectrometry charge sensing. To demonstrate the integration of single-shot readout and qubit operation, we show Rabi driving on both qubits. We find remarkable electric control over the qubit resonance frequencies, providing great qubit addressability. Finally, we analyse the spin relaxation time, which we find to exceed one millisecond, setting the benchmark for hole quantum dot qubits. The ability to coherently manipulate a single hole spin underpins the quality of strained germanium and defines an excellent starting point for the construction of quantum hardware.

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Quantum dot arrays in silicon and germanium

Cited by 132 publications

References 72 publications

Charge Detection in an Array of CMOS Quantum Dots

Charge Detection in an Array of CMOS Quantum Dots

Adiabatic electron charge transfer between two quantum dots in presence of 1/f noise

A single-hole spin qubit

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