Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam

Vitzethum, M.; Schmidt, Ralf; Kiesel, P.; Schafmeister, P.; Reuter, D.; Wieck, A. D.; Döhler, G. H.

doi:10.1016/s1386-9477(01)00506-9

Cited by 13 publications

(10 citation statements)

References 2 publications

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“…12,13 LEDs employing InAs quantum dots in a FIB-created PN junction have also been reported. 14,15 In this paper, we used a FIB to create a nanometer-scale LED on a microfabricated silicon scanning probe tip. The FIB plays two important roles.…”

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confidence: 99%

Near-field scanning optical microscopy with monolithic silicon light emitting diode on probe tip

Hoshino

Rozanski

Bout

et al. 2008

Applied Physics Letters

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We describe optical and topographic imaging using a light emitting diode monolithically integrated on a silicon probe tip for near-field scanning optical microscopy (NSOM). The light emission resulted from a silicon dioxide layer buried between a phosphorus-doped N+ silicon layer and a gallium-doped P+ silicon region locally created at the tip by a focused ion beam. The tip was employed in a standard NSOM excitation setup. The probe successfully measured optical as well as topographic images of a chromium test pattern with imaging resolutions of 400 and 50nm, respectively. The directional resolution dependence of the acquired images directly corresponds to the shape, size, and polarity of the light source on the probe tip. To our knowledge, this report is the first successful near-field imaging result directly measured by such tip-embedded light sources.

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confidence: 99%

Near-field scanning optical microscopy with monolithic silicon light emitting diode on probe tip

Hoshino

Rozanski

Bout

et al. 2008

Applied Physics Letters

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“…Focused ion beams ͑FIBs͒ are established as invaluable tools to manipulate surfaces and produce structures, which aid in the fabrication of a diverse set of nanostructures including perpendicular magnetic recording media, 1,2 fabrication of quantum dot micro-light-emitting diodes, 3 and other applications related to solid state devices. The reliable and reproducible formation of the surface templates is critical to achieve controllability and reproducibility in device designs.…”

Section: Introductionmentioning

confidence: 99%

Characterization of focused-ion-beam induced defect structures in graphite for the future guided self-assembly of molecules

O’Donnell

Reinke

2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inMolecular beam epitaxy growth and characterization of self-assembled MnAs wires on highly oriented pyrolytic graphite J. Vac. Sci. Technol. B 28, C3E6 (2010); 10.1116/1.3357280Erratum: "Characterization of focused-ion-beam induced defect structures in graphite for the future guided selfassembly of molecules" [J.The morphology and periodicity of arrays of single focused-ion-beam induced artificial defects in graphite is probed using scanning tunneling microscopy and modeled through Monte Carlo simulation. While ion dose is kept constant with a fluence of 2.48ϫ 10 15 ions cm −2 , variations in artificial defect morphology are attributed to astigmatism in the beam aperture, to deviation in beam angle, or to distance from beam focal point. Simulation of the collision cascade of the ion in graphite lattice correlates to the artificial defect dimensions of both circular symmetric and elongated asymmetric defects. Periodic arrays of artificial defects exhibit constant periodicities at lower basis dimensions ͑100 nm separation between defects͒, with larger deviations from the periodic structure at higher basis dimensions ͑400 nm separation between defects͒. Well structured periodic arrays of defects are considered for nanostructured patterning of molecules for thin film growth. Local amorphization of graphite due to ion irradiation changes the diffusion field, which can be tailored for the guided self-assembly of molecules.

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“…Several techniques have been developed to obtain low-density QD structures, such as the Stranski-Krastanov self-assembled growth of QDs on a substrate patterned with mesa/holes [6,7], stopping of the rotation of the substrate to obtain a gradient density of InAs QDs [8,9], and a modified droplet epitaxy method to lower the QDs' density [10]; especially one of the most effective method is to stop the InAs deposition at the onset of a two-dimensional to three-dimensional (2D-3D) growth transition [11] by controlling the parameters of 2D-3D growth transition such as temperature, growth rate, deposition amount of indium, and interruption time. However, the narrow range of deposition in the 2D-3D growth transition determines that allowed deviations of controllable parameters are quite limited for repeatable growth of low-density QDs.…”

Section: Introductionmentioning

confidence: 99%

In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots

et al. 2013

Nanoscale Res Lett

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A method to improve the growth repeatability of low-density InAs/GaAs self-assembled quantum dots by molecular beam epitaxy is reported. A sacrificed InAs layer was deposited firstly to determine in situ the accurate parameters of two- to three-dimensional transitions by observation of reflection high-energy electron diffraction patterns, and then the InAs layer annealed immediately before the growth of the low-density InAs quantum dots (QDs). It is confirmed by micro-photoluminescence that control repeatability of low-density QD growth is improved averagely to about 80% which is much higher than that of the QD samples without using a sacrificed InAs layer.

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Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam

Cited by 13 publications

References 2 publications

Near-field scanning optical microscopy with monolithic silicon light emitting diode on probe tip

Near-field scanning optical microscopy with monolithic silicon light emitting diode on probe tip

Characterization of focused-ion-beam induced defect structures in graphite for the future guided self-assembly of molecules

In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots

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