Quantum dot sensitized solar cell: Recent advances and future perspectives in photoanode

Band gap engineered ternary semiconductor PbxCd1−xS: Nanoparticle‐sensitized solar cells with an efficiency of 8.5% under 1% sun—A combined theoretical and experimental study

“…A strategy to increase the optical absorption range is to combine two binary semiconductors with different band gaps. Cosensitized NSSCs such as CdS/CdSe significantly improved their PCE to approximately 5% to 6% . The photovoltaic performance of various single‐layered and double‐layered NSSCs have been presented and compared in several review papers .…”

“…It has a relatively large E g of 2.5 eV and a small absorption range of 300 to 500 nm . The PCE of CdS NSSCs is low (typically approximately 2%) due to the small absorption range . However, the large E g produces an open‐circuit voltage V oc of approximately 0.5 to 0.6 eV, which is a relatively large V oc among all NP materials .…”

“…4 To date, the most widely investigated semiconductor sensitizers have been the binary metal chalcogenides such as CdS, CdSe, PbS, PbSe, and Ag 2 S. [5][6][7][8][9] The power conversion efficiencies (PCEs) of NSSCs based on single-layered binary NPs are low (typically approximately 2%-3%) due to their relatively large E g s and, hence, small light-harvesting ranges. 10,11 A strategy to increase the optical absorption range is to combine two binary semiconductors with different band gaps. Cosensitized NSSCs such as CdS/CdSe significantly improved their PCE to approximately 5% to 6%.…”

“…Cosensitized NSSCs such as CdS/CdSe significantly improved their PCE to approximately 5% to 6%. 10,11 The photovoltaic performance of various single-layered and doublelayered NSSCs have been presented and compared in several review papers. [10][11][12][13] In general, a NSSC achieving a PCE of approximately 6% to 8% can be categorized into a high-efficiency NSSC.…”

“…21 The PCE of CdS NSSCs is low (typically approximately 2%) due to the small absorption range. 10,11 However, the large E g produces an open-circuit voltage V oc of approximately 0.5 to 0.6 eV, which is a relatively large V oc among all NP materials. 10,11 Motivated by the high V oc , this work aims to develop a CdS-based ternary alloyed semiconductor that would produce a broader optical absorption range and retain the high V oc value.…”