2009
DOI: 10.12693/aphyspola.116.464
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Quantum Dots as Sources and Detectors οf Mid- and Far-Infrared Radiation: Theoretical Models

Abstract: We present a review of theoretical methods used to study the electronic structure, optical and transport properties of intraband optoelectronic devices based on self-assembled quantum dots.

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Cited by 10 publications
(3 citation statements)
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“…In the recent years semiconductor nanostructures such as Quantum Dots (QDs) have attracted much attention due to the novel physical properties and potential for device applications in far infrared laser amplifiers (Kukushkin 2009), photo detectors (Krishna 2005;Vukmirovic et al 2009), high speed electro-optical modulators (Majumdar et al 2010), quantum computing (Loss and Divincenzo 1998), and etc. Three dimensional nanoscale confinement of electrons in this structures, makes it possible to observe quantum size effects on the electronic and optical properties of these structures (Ahn and Cuang 1987;Zhang et al 2006;Liu and Xu 2008;Rezaei et al 2008;Karabulut et al 2005).…”
Section: Introductionmentioning
confidence: 99%
“…In the recent years semiconductor nanostructures such as Quantum Dots (QDs) have attracted much attention due to the novel physical properties and potential for device applications in far infrared laser amplifiers (Kukushkin 2009), photo detectors (Krishna 2005;Vukmirovic et al 2009), high speed electro-optical modulators (Majumdar et al 2010), quantum computing (Loss and Divincenzo 1998), and etc. Three dimensional nanoscale confinement of electrons in this structures, makes it possible to observe quantum size effects on the electronic and optical properties of these structures (Ahn and Cuang 1987;Zhang et al 2006;Liu and Xu 2008;Rezaei et al 2008;Karabulut et al 2005).…”
Section: Introductionmentioning
confidence: 99%
“…As a result, the cm motion has the same energy eigenvalues as a single electron. This is very important for far-infrared (FIR) spectroscopy experiments [87][88][89][90] where, typically, the interaction of confined electrons with an electromagnetic field, E e i ωt can be described by a Hamiltonian of the form…”
Section: Kohn's Generalized Theoremmentioning
confidence: 99%
“…There has been a tremendous improvement in research activities on the low dimensional semiconductor quantum dots due to the advanced fabrication techniques invented for the past few decades. The study of semiconductor quantum dots and nanocrystals has been of a great interest from the experimental and theoretical point of view in recent years [1][2][3][4][5][6][7][8][9][10][11][12][13]. The origin of the interest lies in the size of quantization.…”
Section: Introductionmentioning
confidence: 99%