Quantum Dots for Display Applications

Abstract

This article offers a materials‐chemistry perspective for colloidal quantum dots (QDs) in the field of display, including QD‐enhanced liquid‐crystal‐display (QD‐LCD) and QD‐based light‐emitting‐diodes (QLEDs) display. The rapid successes of QDs for display in the past five years are not accidental but have a deep root in both maturity of their synthetic chemistry and their unique chemical, optical, and optoelectronic properties. This article intends to discuss the natural match of QD emitters for display and chemical means to eventually bring about their full potential.

Pb‐Doped Ag2Se Quantum Dots with Enhanced Photoluminescence in the NIR‐II Window

“…Colloid semiconductor nanocrystals (or quantum dots, QDs) have been widely applied in various fields such as solar cells, light‐emitting didoes, and biological labeling due to their appealing structure and optical properties including high surface activity, small particle size, easy solution processability, and high photoluminescent quantum yield (PLQY). [ 1–4 ] Impurity atom doping into QDs is an efficient strategy to optimize the photoluminescence properties such as emission peak position and emission intensity by adjusting the electron structure of QDs, which has been essential to the development of semiconductor‐based technologies. [ 5,6 ] For example, great progresses have been made with magnetic substitutional impurities in ZnS and ZnSe QDs, [ 7–9 ] these dopants (i.e., Mn, Cu, and Co) are isovalent with the cations and they were replaced to obtain the transition state properties, but no additional carriers are introduced.…”

28.3: Stabilization of photoluminescence perovskite nanocrystals via atomic layer deposition and the process influences

“…ALD technology was applied to ultra-thin functional layers of devices, such as the barrier layer, transmission layer, electrode and external flexible packaging layer in solar cells and light-emitting diodes(LED). [12][13][14] Liu fabricated NC field-effect transistors and solar cells with amorphous alumina yields devices with enhanced for more than months in air. ZnO deposited by ALD lowers the height of the inter-NC tunnel barrier for electron transport, thus the electron mobility improved.…”

Effects of UV Irradiation and Storage on the Performance of Inverted Red Quantum-Dot Light-Emitting Diodes

“…Quantum-dot light-emitting diodes (QLEDs) are promising large-area electroluminescent devices used for display and solid-state lighting applications, due to their high efficiency, tunable color, high color purity, and simple yet cost-effective solution processibility [ 1 , 2 , 3 ]. In the past few years, the performance of QLEDs has been significantly improved via thorough study of the core/shell structure of QDs [ 4 , 5 ], the surface ligands of QDs [ 6 , 7 ], and device structure engineering [ 8 , 9 ].…”