1993
DOI: 10.1063/1.110489
|View full text |Cite
|
Sign up to set email alerts
|

Quantum efficiencies exceeding unity due to impact ionization in silicon solar cells

Abstract: Absolute measurements demonstrate internal quantum efficiencies in silicon solar cells to exceed unity for photon energies above the first direct band gap and to show distinct spectral features that correspond to specific points in the Brillouin zone. Ultraviolet radiation can generate hot carriers with sufficient energy to cause impact ionization which results in two electron hole pairs per incident photon.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

7
186
1
5

Year Published

1999
1999
2017
2017

Publication Types

Select...
5
4

Relationship

0
9

Authors

Journals

citations
Cited by 290 publications
(199 citation statements)
references
References 11 publications
7
186
1
5
Order By: Relevance
“…in semiconductors prevents materials such as Si and GaAs from yielding improved solar conversion efficiencies. 8,9 It has recently been proposed, 10,11 however, that I.I. could be greatly enhanced in semiconductor quantum dots (QDs) (or nanocrystals (NCs)) compared to bulk semiconductors, because the limitations discussed above for I.I.…”
mentioning
confidence: 99%
“…in semiconductors prevents materials such as Si and GaAs from yielding improved solar conversion efficiencies. 8,9 It has recently been proposed, 10,11 however, that I.I. could be greatly enhanced in semiconductor quantum dots (QDs) (or nanocrystals (NCs)) compared to bulk semiconductors, because the limitations discussed above for I.I.…”
mentioning
confidence: 99%
“…Another promising type of third-generation solar cells are multiple-exciton-generation solar cells, which enable the conversion of a single highenergy photon to multiple electron-hole pairs by employing semiconductor superlattices or quantum dot semiconductor structures. [26,27] This approach could overcome the central limitation of existing solar cells exhibiting a one-to-one relationship between absorbed photons and electron-hole pairs.…”
Section: Solar Energy Conversionmentioning
confidence: 99%
“…the minimal photon energy required to realise I.I. ), which is located in the UV part of the solar spectrum for silicon and most other commercially relevant PV materials silicon th ( 3 .4 eV) E = [15]. This high E th has been explained by considering the bulk semiconductor's energy and crystal momentum, both of which must be conserved during the generation of additional charge carriers [36].…”
Section: In Inorganic Bulk Semiconductorsmentioning
confidence: 99%
“…Carrier multiplication (CM) effects, where the energy of a high-energy photon is distributed among multiple carrier pairs with lower energy, present another concept capable of reducing carrier-cooling losses [13][14][15][16]. Here, additional charges are produced from energy that would otherwise have been lost as heat.…”
Section: Introductionmentioning
confidence: 99%