Quantum efficiency of femtosecond-laser sulfur hyperdoped silicon solar cells after different annealing regimes

Gimpel, Thomas; Winter, S.; Bossmeyer, Marcel; Schade, Wolfgang

doi:10.1016/j.solmat.2018.03.001

Cited by 27 publications

(10 citation statements)

References 34 publications

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“…Moreover, the carrier recombination loss was reduced due to the narrow transport distance of photogenerated carriers to the PN junction. Gimpel et al [140] compared the effect of different metal layer systems and deposition techniques on the contact behavior of devices based on S-hyperdoped Si. I-V curves and reactance spectra results showed that pulsed laser deposition Ti/Pd/Ag was the most promising front contact for solar cells.…”

Section: Device Applicationsmentioning

confidence: 99%

Hyperdoped silicon: Processing, properties, and devices

Tong¹,

Bu²,

Zhang³

et al. 2022

J. Semicond.

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Hyperdoping that introduces impurities with concentrations exceeding their equilibrium solubility has been attracting great interest since the tuning of semiconductor properties increasingly relies on extreme measures. In this review we focus on hyperdoped silicon (Si) by introducing methods used for the hyperdoping of Si such as ion implantation and laser doping, discussing the electrical and optical properties of hyperdoped bulk Si, Si nanocrystals, Si nanowires and Si films, and presenting the use of hyperdoped Si for devices like infrared photodetectors and solar cells. The perspectives of the development of hyperdoped Si are also provided.

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Section: Device Applicationsmentioning

confidence: 99%

Hyperdoped silicon: Processing, properties, and devices

Tong¹,

Bu²,

Zhang³

et al. 2022

J. Semicond.

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“…Previous studies on hyperdoped systems were mainly focused on Si [12][13][14][15][16][17][18][19][20]. One carrier recombination study in chalcogen-hyperdoped Si reveals a decrease in lifetimes with increasing dopant concentrations [18].…”

Section: Introductionmentioning

confidence: 99%

Carrier Dynamics and Absorption Properties of Gold-Hyperdoped Germanium: Insight Into Tailoring Defect Energetics

et al. 2021

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Hyperdoping germanium with gold is a potential method to produce room-temperature shortwavelength-infrared radiation (SWIR; 1.4-3.0 μm) photodetection. We investigate the charge carrier dynamics, light absorption, and structural properties of gold-hyperdoped germanium (Ge:Au) fabricated with varying ion implantation and nanosecond pulsed laser melting conditions. Time-resolved terahertz spectroscopy (TRTS) measurements show that Ge:Au carrier lifetime is significantly higher than that in previously studied hyperdoped silicon systems. Furthermore, we find that lattice composition, sub-bandgap optical absorption, and carrier dynamics depend greatly on hyperdoping conditions. We use density functional theory (DFT) to model dopant distribution, electronic band structure, and optical absorption. These simulations help explain experimentally observed differences in optical and optoelectronic behavior across different samples. DFT modeling reveals that substitutional dopant incorporation has the lowest formation energy and leads to deep energy levels. In contrast, interstitial or dopant-vacancy complex incorporation yields shallower energy levels that do not contribute to sub-band-gap light absorption and have a small effect on charge carrier lifetimes. These results suggest that it is promising to tailor dopant incorporation sites of Ge:Au for SWIR photodetection applications.

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“…The silicon after the laser doping technique, for instance, turns out to be a different silicon material far from its origin. The resulting microstructured and hyperdoped silicon has therefore received extensive attention for the optoelectronic − and photovoltaic − applications. The microstructured surface means a larger surface-to-volume ratio, and the hyperdoping process could bring various defects on the surface.…”

Section: Introductionmentioning

confidence: 99%

Rapid and Wide-Range Detection of NO_x Gas by N-Hyperdoped Silicon with the Assistance of a Photovoltaic Self-Powered Sensing Mode

Liu

Zhao

et al. 2019

ACS Sens.

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Wide-dynamic-range NO x sensors are vital for the environment and health purposes, but few sensors could achieve wide-range detection with ultralow and ultrahigh concentrations at the same time. In this article, the microstructured and nitrogen-hyperdoped silicon (N-Si) for NO x gas sensing is investigated systematically. Working by the change of surface conductivity, the sensor is ultrasensitive to low concentrations of NO x down to 11 ppb and shows a rapid response/recovery time of 22/33 s for 80 ppb. When the NO x concentration increases and exceeds a threshold value (10–50 ppm), an n–p conduction-type transition is observed due to the inversion of the conduction type of major carriers, which limits the dynamic range of the sensor at high concentration. However, when the sensor works in a photovoltaic self-powered mode under the asymmetric light illumination, the limitation can be successfully overcome. Therefore, with the combination of the two working principles, a wide dynamic range stretching over 6 orders of magnitude (∼0.011–4000 ppm) can be achieved.

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Quantum efficiency of femtosecond-laser sulfur hyperdoped silicon solar cells after different annealing regimes

Cited by 27 publications

References 34 publications

Hyperdoped silicon: Processing, properties, and devices

Hyperdoped silicon: Processing, properties, and devices

Carrier Dynamics and Absorption Properties of Gold-Hyperdoped Germanium: Insight Into Tailoring Defect Energetics

Rapid and Wide-Range Detection of NO_x Gas by N-Hyperdoped Silicon with the Assistance of a Photovoltaic Self-Powered Sensing Mode

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Quantum efficiency of femtosecond-laser sulfur hyperdoped silicon solar cells after different annealing regimes

Cited by 27 publications

References 34 publications

Hyperdoped silicon: Processing, properties, and devices

Hyperdoped silicon: Processing, properties, and devices

Carrier Dynamics and Absorption Properties of Gold-Hyperdoped Germanium: Insight Into Tailoring Defect Energetics

Rapid and Wide-Range Detection of NOx Gas by N-Hyperdoped Silicon with the Assistance of a Photovoltaic Self-Powered Sensing Mode

Contact Info

Product

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Rapid and Wide-Range Detection of NO_x Gas by N-Hyperdoped Silicon with the Assistance of a Photovoltaic Self-Powered Sensing Mode