Quantum electronic transport in polarization-engineered GaN/InGaN/GaN tunnel junctions

Cavassilas, Nicolas; Claveau, Yann; Bescond, Marc; Michelini, Fabienne

doi:10.1063/1.4981135

Cited by 10 publications

(4 citation statements)

References 15 publications

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“…The material parameters and characterization results were combined with the carrier tunneling model, polarization effects model, carrier drift-diffusion model, absorption coefficient model, Farahmand modified Caughey-Thomas (FMCT) model, Adachi model, and the optical composite model to create the two-dimensional (2-D) model of the InGaN/GaN SLs SCs. 20,25 The model was used to verify how the SLs structure impacts the SCs's performance. Finally, we compared the simulated results to the experimental data.…”

Section: Simulation Calculationmentioning

confidence: 99%

Enhancement of Short-Circuit Current Density in Superlattice-Based InGaN/GaN Solar Cells

Shan,

Song,

et al. 2023

ECS J. Solid State Sci. Technol.

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The mechanism of short-circuit current density (Jsc) enhancement in InGaN/GaN superlattices(SLs)-structured solar cells (SCs) was investigated theoretically and experimentally, and compared with conventional InGaN/GaN multiple quantum wells SCs. Due to the ultrathin structure of the X-ray diffraction SLs, a tunneling model was introduced in Silvaco software. The simulation results showed that the trend of the simulation results is consistent with the experimental values. Due to the contribution of the tunneling effect, the Jsc of SCs with SLs structure was greatly improved, but the open circuit voltage was also reduced due to defects in the growth process of epitaxial wafers with SLs structure. These observations suggest that tunneling effects increase the Jsc of the SCs, thus improving the photovoltaic conversion efficiency of SCs. This study provides evidence for the fabrication of highly efficient InGaN SCs.

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Section: Simulation Calculationmentioning

confidence: 99%

Enhancement of Short-Circuit Current Density in Superlattice-Based InGaN/GaN Solar Cells

Shan,

Song,

et al. 2023

ECS J. Solid State Sci. Technol.

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“…To understand the influence of the thickness on the tunneling properties of the type-II TJs, we performed NEGF based simulations of the quantum transport using a six-band k.p Hamiltonian for the electronic states. The details of this model, which properly considers the conduction-valence coupling at the origin of the band-to-band tunneling, can be found in (19) and (20) ; we have previously demonstrated its ability to predict the J-V characteristics of a simple GaAs TJ (21). The set of material parameters is taken from (22), whereas the band-offsets of the InGaAs/GaAsSb heterejonction are taken from (11).…”

Section: Origin Of the Impact Of The Type-ii Tj Layer Thicknesses On mentioning

confidence: 99%

“…The effect of strain is not considered in the calculation. As shown in (23) or (19) in the case of InAlGaAs/InGaAs TJs and GaN/InGaN/GaN TJs respectively, an analysis of the LDOS considering a vanishing transverse wave vector can provide relevant information on the different tunneling mechanisms of TJs with various designs. Fig.…”

Section: Origin Of the Impact Of The Type-ii Tj Layer Thicknesses On mentioning

confidence: 99%

Thickness Limitation of Band-to-Band Tunneling Process in GaAsSb/InGaAs Type-II Tunnel Junctions Designed for Multi-Junction Solar Cells

Louarn

Claveau

Fontaine

et al. 2019

ACS Appl. Energy Mater.

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This article reports on the impact of the thickness and/or the composition on the performance of type-II n+ InGaAs / p+ GaAsSb tunnel junctions. The InGaAs/GaAsSb staggered band-offset heterojunction is expected to improve tunneling properties. Devices have been grown by molecular beam epitaxy with various thicknesses and/or Sb and In concentrations. For thin elastically strained type-II tunnel junctions, the electrical characteristics exhibit degraded transport performances compared to the reference p+ GaAs / n+ GaAs tunnel junction structures, while much better tunneling peak currents are achieved with strain-relaxed thick type-II tunnel junctions. Based on a theoretical analysis of the local density of states and the band-edges profiles of the type II tunnel junctions, we propose a suitable design for type II tunnel junctions with high tunneling current density towards their use in multijunction solar cells.

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“…Numerical simulations of the J-V characteristics of samples TJ-1A and TJ-1B are performed with a quantum transport model based on the non-equilibrium Green's function (NEGF) Keldysh's formalism coupled with a 6-bands k.p description of the materials band structure, described in [16]. The set of material parameters are taken from [21], whereas the band-offsets of the InGaAs/GaAs heterejonction are taken from [15].…”

Section: Gaas Tunnel Junction With Ingaas Qwmentioning

confidence: 99%

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

Louarn¹,

Claveau²,

Marigo-Lombart³

et al. 2018

J. Phys. D: Appl. Phys.

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In this article, we investigate the impacts of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs Tunnel Junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green's function formalism and a 6-band k.p hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus the simple insertion of staggered band lineup heterostructures enables to reach tunneling current well above the kA/cm 2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potentials for TJ-based components such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

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Quantum electronic transport in polarization-engineered GaN/InGaN/GaN tunnel junctions

Cited by 10 publications

References 15 publications

Enhancement of Short-Circuit Current Density in Superlattice-Based InGaN/GaN Solar Cells

Enhancement of Short-Circuit Current Density in Superlattice-Based InGaN/GaN Solar Cells

Thickness Limitation of Band-to-Band Tunneling Process in GaAsSb/InGaAs Type-II Tunnel Junctions Designed for Multi-Junction Solar Cells

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

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